A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film

Magnetoresistive element and magnetic memory

Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at. %. The magnetism is suppressed when the Mn dose is increasedor decreased away from the 3 at. % value, or when n-type GaP substrates are used. At low temperatures the saturated moment is on the order of 1 Bohr magneton, and the spin wave stiffness inferred from the Bloch-law T 3 / 2 dependence of the magnetization provides an estimate T c = 385 K of the Curie temperature that exceeds the experimental value, T c = 270 K. The presence of ferromagnetic clusters and hysteresis to temperatures of at least 330 K is attributed to disorder and proximity to a metal-insulating transition.

/pdf/unconventional-carrier-mediated-ferromagnetism-above-room-3aawpj3xq1.pdf

Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C.

We study a system consisting of magnetic tunneling barriers, in particular we have studied the following structures: magnetic quantum steps, barriers, and magnetic wells. The energy spectrum (bound and scattered states) for theses systems is obtained and the nature of the states is discussed

Quantum structures created by nonhomogeneous magnetic fields.

We propose a new-type of thermopile consisting of two ferromagnetic materials with anomalous Nernst effects (ANEs) of opposite signs. L10-FePt and L10-MnGa have been chosen as the materials because they show large ANEs with opposite signs. The combination of perpendicularly magnetized FePt and MnGa wires enhances the ANE voltage effectively. The ANE in in-plane magnetized FePt films induced by applying a perpendicular temperature difference shows no variation against the film thickness, which is a promising characteristic for thermoelectric applications because the internal resistance of the thermopile, which determines the extractable electric power, can be reduced by increasing the thickness of ferromagnetic wires.

https://iopscience.iop.org/article/10.7567/APEX.6.033003/pdf

Anomalous Nernst Effect in L10-FePt/MnGa Thermopiles for New Thermoelectric Applications

Electronic structures and magnetism of CuAu-type MnNi and MnGa

We have successfully grown ferromagnetic MnGa ultrathin films on GaAs substrates by molecular beam epitaxy. Reflection high energy electron diffraction and cross‐sectional transmission electron microscopy show that monocrystalline MnGa films are grown with the c axis of the tetragonal unit cell normal to the (001) GaAs substrates. Both magnetization measurements by vibrating sample magnetometer and extraordinary Hall effect (EHE) measurements indicate perpendicular magnetization, with the remnant magnetization of 225 emu/cm3 and EHE resistivity in the range of 0.5–4 μΩ cm at room temperature. The material possesses properties ideal for certain nonvolatile magnetic memory coupled with underlying III‐V circuitry.

Epitaxial growth of ferromagnetic ultrathin MnGa films with perpendicular magnetization on GaAs

We have studied magnetic and magnetotransport properties of two kinds of new epitaxial magnetic superlattices, MnGa/NiGa and MnAl/NiAl, consisting of ferromagnetic tetragonal MnGa (MnAl) and non-magnetic CsCl-type NiGa (NiAl), grown by molecular beam epitaxy (MBE) on (001) GaAs substrates. Strong perpendicular magnetization is evidenced in both types of superlattices, with the values of remanent magnetization higher than those of MBE-grown MnGa and MnAl thin films reported previously. At room temperature, the hysteresis loops in the extraordinary Hall effect (EHE) measurements on the MnGa/NiGa superlattices exhibit evenly-spaced multiple steps, while the MnAl/NiAl superlattices show rectangular single-stepped EHE hysteresis loops with nearly perfect squareness. The capability of growing these kinds of new epitaxial magnetic superlattices gives a new degree of materials design of the magnetic thin films on GaAs substrates, offering the possibility of integrating magnetic devices with III–V semiconductor electronics and photonics.

Magnetotransport properties of MBE-grown magnetic superlattices of Mn-based intermetallics on GaAs heterostructures

Epitaxial ferromagnetic MnGa/NiGa multilayers on GaAs

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Epitaxial growth of ferromagnetic ultrathin MnGa films with perpendicular magnetization on GaAs

Magnetotransport properties of MBE-grown magnetic superlattices of Mn-based intermetallics on GaAs heterostructures

Epitaxial ferromagnetic MnGa/NiGa multilayers on GaAs