Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics with capabilities beyond existing technologies due to its large bandgap, controllable doping, and the availability of large diameter, relatively inexpensive substrates. These applications include power conditioning systems, including pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors, and advanced power management and control electronics. Wide bandgap (WBG) power devices offer potential savings in both energy and cost. However, converters powered by WBG devices require innovation at all levels, entailing changes to system design, circuit architecture, qualification metrics, and even market models. The performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors benefits from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. Reverse breakdown voltages of over 2 kV for β-Ga2O3 have been reported, either with or without edge termination and over 3 kV for a lateral field-plated Ga2O3 Schottky diode on sapphire. The metal-oxide-semiconductor field-effect transistors fabricated on Ga2O3 to date have predominantly been depletion (d-mode) devices, with a few demonstrations of enhancement (e-mode) operation. While these results are promising, what are the limitations of this technology and what needs to occur for it to play a role alongside the more mature SiC and GaN power device technologies? The low thermal conductivity might be mitigated by transferring devices to another substrate or thinning down the substrate and using a heatsink as well as top-side heat extraction. We give a perspective on the materials’ properties and physics of transport, thermal conduction, doping capabilities, and device design that summarizes the current limitations and future areas of development. A key requirement is continued interest from military electronics development agencies. The history of the power electronics device field has shown that new technologies appear roughly every 10-12 years, with a cycle of performance evolution and optimization. The older technologies, however, survive long into the marketplace, for various reasons. Ga2O3 may supplement SiC and GaN, but is not expected to replace them.

/pdf/perspective-ga2o3-for-ultra-high-power-rectifiers-and-xypt4r8hyf.pdf

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

Conducting, boron doped diamond (BDD), in addition to its superior material properties, offers several notable attributes to the electrochemist making it an intriguing material for electrochemical research. These include the widest solvent window of all electrode materials; low background and capacitive currents; reduced fouling compared to other electrodes and; the ability to withstand extreme potentials, corrosive and high temperature/pressure environments. However, BDD is not your typical electrode material, it is a semi-conductor doped degenerately with boron to present semi-metallic characteristics. Input from materials scientists, chemists and physicists has been required to aid understanding of how to work with this material from an electrochemical viewpoint and improve electrode quality. Importantly, depending on how the BDD has been grown and then subsequently treated, prior to electrochemical measurement, the resulting material properties can vary quite significantly from one electrode to the next. This likely explains the variability seen by different researchers working on the same experimental systems. The aim of this "protocols" article is not to provide a state-of-the-art review of diamond electrochemistry, suitable references are provided to the interested reader, but instead serves as a reference point for any researcher wishing to commence work with diamond electrodes and interpret electrochemical data. It provides information on how best to characterise the material properties of the electrode before use and outlines the interplay between boron dopant density, non-diamond-carbon content, grain morphology, surface chemistry and redox couple identity. All should ideally be considered when interpretating electrochemical data arising from the diamond electrode. This will aid the reader in making meaningful comparisons between data obtained by different researchers using different diamond electrodes. The guide also aims to help educate the researcher in choosing which form of BDD is best suited to their research application.

A practical guide to using boron doped diamond in electrochemical research.

Conductive diamond possesses unique features as compared to other solid electrodes, such as a wide electrochemical potential window, a low and stable background current, relatively rapid rates of electron-transfer for soluble redox systems without conventional pretreatment, long-term responses, stability, biocompatibility, and a rich surface chemistry. Conductive diamond microcrystalline and nanocrystalline films, structures and particles have been prepared using a variety of approaches. Given these highly desirable attributes, conductive diamond has found extensive use as an enabling electrode across a variety of fields encompassing chemical and biochemical sensing, environmental degradation, electrosynthesis, electrocatalysis, and energy storage and conversion. This review provides an overview of the fundamental properties and highlights recent progress and achievements in the growth of boron-doped (metal-like) and nitrogen and phosphorus-doped (semi-conducting) diamond and hydrogen-terminated undoped diamond electrodes. Applications in electroanalysis, environmental degradation, electrosynthesis electrocatalysis, and electrochemical energy storage are also discussed. Diamond electrochemical devices utilizing micro-scale, ultramicro-scale, and nano-scale electrodes as well as their counterpart arrays are viewed. The challenges and future research directions of conductive diamond are discussed and outlined. This review will be important and informative for chemists, biochemists, physicists, materials scientists, and engineers engaged in the use of these novel forms of carbon.

Conductive diamond: synthesis, properties, and electrochemical applications

Micro milling cutters or micro mills are unique and important micro tools for fabricating miniaturised devices with sufficient geometrical and dimensional accuracy and machined surface integrity. Micro milling cutters, compared to conventional macro tools, have significantly different material removal mechanisms. They are also made of different raw materials and structures and exhibit distinctive machining characteristics and performances. Herein, we present the first comprehensive and up-to-date review of micro milling cutters in terms of their uniqueness, material removal mechanisms, materials and compositions, structures and design, fabrication techniques and machining performances, to provide adequate guidance for interested involvers. We also outline and discuss several possible future research directions to offer potential insights for the micro milling community and future researchers.

Advances in micro milling: From tool fabrication to process outcomes

Recent progress in the applications of boron doped diamond electrodes in electroanalysis of organic compounds and biomolecules - A review.

EIS, CV and XPS experiments were carried out to address the evolution of H-terminated BDD electrochemical properties under intensive use and air aging. A drastic drop of apparent electron transfer rate k' 0 was thus recorded using Fe(CN 6 ) 3-/4- as the redox mediator by identifying components of the Randles equivalent circuit. Excellent agreement was observed between theoretical and experimental curves. The feasibility of recovering and stabilizing high reactivity and reversible behaviour by applying a suitable electrochemical post treatment was then demonstrated. Such a treatment was developed empirically and seemed to significantly improve the electrode performances. On the basis of our results, we claim that the electrochemical evolutions observed are strongly linked to chemical termination modifications and partial inactivation of the electrode surface. Further research on the mechanisms that govern electron mediation at the diamond surface would be of high interest for better control of diamond electrode stability and reactivity towards their applications for bio-electronic devices.

Stability of H-terminated BDD electrodes: an insight into the influence of the surface preparation

Electrochemical diamond sensors for TNT detection in water

A single crystal diamond large area thin membrane was assembled as a p-doped/Intrinsic/Metal (PIM) structure and used in a betavoltaic configuration. When tested with a 20 keV electron beam from a high resolution scanning electron microscope, we measured an open circuit voltage (Voc) of 1.85 V, a charge collection efficiency (CCE) of 98%, a fill-factor of 80%, and a total conversion efficiency of 9.4%. These parameters are inherently linked to the diamond membrane PIM structure that allows full device depletion even at 0 V and are among the highest reported up to now for any other material tested for betavoltaic devices. It enables to drive a high short-circuit current Isc up to 7.12 μA, to reach a maximum power Pmax of 10.48 μW, a remarkable value demonstrating the high-benefit of diamond for the realization of long-life radioisotope based micro-batteries.

/pdf/single-crystal-cvd-diamond-membranes-for-betavoltaic-cells-alatmgscca.pdf

Single crystal CVD diamond membranes for betavoltaic cells

The use of diamond to develop electrochemical (EC) sensors opens up promising perspectives with interests for biosensing applications. However, in spite of the superior EC properties of diamond, two crucial issues remain to be solved: to improve (i) the electrode stability and (ii) the charge transfer rate k 0 . To address these issues, the influence of the boron concentration and of EC treatments on EC behaviour was assessed. Our results were compared with those obtained on a commercial diamond electrode. The reactivity of the as-grown electrodes was very high whatever the boron concentration. However, a systematic linear increase of the charge transfer resistance (R t ) with time, highly dependent on the boron concentration, was observed. The most favourable EC behaviour was obtained for a boron concentration close to the phase separation limit . and attributed to a higher effective doping. Moreover, a further EC-treatment of the diamond samples considerably enhances the electrodes stability. Optimized samples, obtained after EC-treatment, show a high reactivity (k 0 = 0.2 cm/s) equivalent to that of platinum as well as a remarkably enhanced stability.

High reactivity and stability of diamond electrodes: The influence of the B-doping concentration

Electrochemical behaviour of (111) B-Doped Polycrystalline Diamond: Morphology/surface conductivity/activity assessed by EIS and CS-AFM

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