J. Bogan
Dublin City University
44 Papers
230 Citations
J. Bogan is an academic researcher from Dublin City University. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Diffusion barrier. The author has an hindex of 12, co-authored 43 publications.
Chat about Author
Papers
Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO2 substrates
Juan G. Lozano,Sergio Lozano-Perez,J. Bogan,Y. C. Wang,Barry Brennan,Peter D. Nellist,G. Hughes +6 more
TL;DR: In this article, the authors investigated the diffusion interactions between the Mn and Cu layers following a 450°C anneal, where the Mn diffuses toward the surface of the structure, while Cu diffuses towards the Mn/SiO2 but does not propagate into the dielectric.
42
Chemical and structural investigation of the role of both Mn and Mn oxide in the formation of manganese silicate barrier layers on SiO2
TL;DR: In this article, the role of oxygen in determining the extent of the interaction between the deposited Mn and the SiO2 substrate was investigated using x-ray photoelectron spectroscopy.
In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures.
TL;DR: Capacitance voltage (CV) analysis, before and after tube furnace anneals of the fabricated MOS structures showed that the presence of the MnSiO3 barrier layer significantly improved electric stability of the device structures.
38
Synchrotron radiation photoemission study of in situ manganese silicate formation on SiO2 for barrier layer applications
TL;DR: In this article, the in situ formation of ultra thin Mn silicate layers on SiO2 has been investigated, which has relevance for copper diffusion barrier layers in microelectronic devices.
37
Area-Selective ALD of Ru on Nanometer-Scale Cu Lines through Dimerization of Amino-Functionalized Alkoxy Silane Passivation Films.
Ivan Zyulkov,Ivan Zyulkov,Viraj Madhiwala,Ekaterina N. Voronina,Matthew Snelgrove,J. Bogan,Robert O'Connor,Stefan De Gendt,Stefan De Gendt,Silvia Armini +9 more
TL;DR: In this paper, an area-selective deposition of Ru by atomic layer deposition (ALD) is investigated using alkoxy siloxane dielectric passivation layers, and a comparison of several silane organic SAM precursors in terms of Ru ALD performance is reported.
29