Wafer-level heterogeneous integration technologies for microoptoelectromechanical systems (MOEMS), microelectromechanical systems (MEMS), and nanoelectromechanical systems (NEMS) enable the combination of dissimilar classes of materials and components into single systems. Thus, high-performance materials and subsystems can be combined in ways that would otherwise not be possible, and thereby forming complex and highly integrated micro- or nanosystems. Examples include the integration of high-performance optical, electrical or mechanical materials such as monocrystalline silicon, graphene or III-V materials with integrated electronic circuits. In this paper the state-of-the-art of wafer-level heterogeneous integration technologies suitable for MOEMS, MEMS, and NEMS devices are reviewed. Various heterogeneous MOEMS, MEMS, and NEMS devices that have been described in literature are presented.

Wafer-Level Heterogeneous Integration for MOEMS, MEMS, and NEMS

Experiments using laser cooled atoms and ions show real promise for practical applications in quantum-enhanced metrology, timing, navigation, and sensing as well as exotic roles in quantum computing, networking, and simulation. The heart of many of these experiments has been translated to microfabricated platforms known as atom chips whose construction readily lend themselves to integration with larger systems and future mass production. To truly make the jump from laboratory demonstrations to practical, rugged devices, the complex surrounding infrastructure (including vacuum systems, optics, and lasers) also needs to be miniaturized and integrated. In this paper we explore the feasibility of applying this approach to the Magneto-Optical Trap; incorporating the vacuum system, atom source and optical geometry into a permanently sealed micro-litre system capable of maintaining 10−10 mbar for more than 1000 days of operation with passive pumping alone. We demonstrate such an engineering challenge is achievable using recent advances in semiconductor microfabrication techniques and materials.

/pdf/contributed-review-the-feasibility-of-a-fully-miniaturized-2dh25xfszv.pdf

Contributed Review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

Experiments using laser cooled atoms and ions show real promise for practical applications in quantum-enhanced metrology, timing, navigation, and sensing as well as exotic roles in quantum computing, networking, and simulation. The heart of many of these experiments has been translated to microfabricated platforms known as atom chips whose construction readily lend themselves to integration with larger systems and future mass production. To truly make the jump from laboratory demonstrations to practical, rugged devices, the complex surrounding infrastructure (including vacuum systems, optics, and lasers) also needs to be miniaturized and integrated. In this paper we explore the feasibility of applying this approach to the Magneto-Optical Trap; incorporating the vacuum system, atom source and optical geometry into a permanently sealed micro-litre system capable of maintaining 10-10 mbar for more than 1000 days of operation with passive pumping alone. We demonstrate such an engineering challenge is achievable using recent advances in semiconductor microfabrication techniques and materials.

/pdf/the-feasibility-of-a-fully-miniaturized-magneto-optical-trap-5cn605vtdh.pdf

The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

Multicolor electrophosphorescent organic light-emitting diode (OLED) pixel patterning by organic vapor jet printing (OVJP) is demonstrated, showing that this technique is capable of rapidly generating high-definition full-color displays. The resolution limits, and means to achieve them are described using a combination of simulation and experimental approaches.

/pdf/vapor-phase-microprinting-of-multicolor-phosphorescent-12z0li3mdk.pdf

Vapor‐Phase Microprinting of Multicolor Phosphorescent Organic Light Emitting Device Arrays

Au/Si eutectic bonding is considered to BE a promising technology for creating 3D structures and hermetic packaging in micro-electro-mechanical system (MEMS) devices However, it suffers from the problems of a non-uniform bonding interface and complex processes for the interconnection of metal wires This paper presents a novel Au/Si eutectic wafer bonding structure and an implementation method for MEMS accelerometer packaging The related processing parameters influencing the Au/Si eutectic bonding quality were widely investigated It was found that a high temperature of 400 °C with a low heating/cooling rate of 5 °C/min is crucial for successful Au/Si eutectic bonding High contact force is beneficial for bonding uniformity, but the bonding strength and bonding yield decrease when the contact force increases from 3000 to 5000 N due to the metal squeezing out of the interface The application of TiW as an adhesion layer on a glass substrate, compared with a commonly used Cr or Ti layer, significantly improves the bonding quality The bonding strength is higher than 50 MPa, and the bonding yield is above 90% for the presented Au/Si eutectic bonding Furthermore, the wafer-level vacuum packaging of the MEMS accelerometer was achieved based on Au/Si eutectic bonding and anodic bonding with one process Testing results show a nonlinearity of 091% and a sensitivity of 106 V/g for the MEMS accelerometer This Au/Si eutectic bonding process can be applied to the development of reliable, low-temperature, low-cost fabrication and hermetic packaging for MEMS devices

https://www.mdpi.com/2072-666X/8/5/158/pdf

Investigation of Au/Si Eutectic Wafer Bonding for MEMS Accelerometers

Gold eutectic bonding of silicon wafers is a good candidate for wafer level vacuum packaging of vibrating MEMS: in this paper we investigated several e-beam evaporated metallizations stacks including a titanium adhesion layer, an optional diffusion barrier (Ni or Pt) and a gold film for eutectic bonding on Si and SiO2/Si wafers. Interdiffusion in the multilayers for annealing temperatures (380–430°C) larger than the Au–Si eutectic temperature (363°C) and times corresponding to a bonding process was characterized by RBS, roughness and resistivity measurements. Au/Pt/Ti and Au/Ti/SiO2 were found to have the best characteristics for bonding. This was confirmed by bonding experiments.

Gold metallizations for eutectic bonding of silicon wafers

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Gold metallizations for eutectic bonding of silicon wafers