In this paper, we report for the first time, the growth of high quality ultrathin oxynitrides formed by nitridation of SiO/sub 2/ in nitric oxide (NO) ambient using in-situ rapid thermal processing (RTP). This process is highly self-limited compared with N/sub 2/O oxidation of silicon. A significant improvement in the interface endurance and charge trapping properties, under constant current stress, compared to pure O/sub 2/-grown and N/sub 2/O-grown oxides is observed. The NO growth process will have a great impact on future CMOS and EEPROM technologies. >

MOS characteristics of ultrathin NO-grown oxynitrides

A detailed study of time-dependent dielectric breakdown (TDDB) in N/sub 2/O-grown thin (47-120 AA) silicon oxides is reported. A significant degradation in breakdown properties was observed with increasing oxide growth temperatures. A physical model based on undulations at the Si/SiO/sub 2/ interface is proposed to account for the degradation. Accelerated breakdown for higher operating temperatures and higher oxide fields as well as thickness dependence of TDDB are studied under both polarities of injection. Breakdown under unipolar and bipolar stress in N/sub 2/O oxides is compared with DC breakdown. An asymmetric improvement in time-to-breakdown under positive versus negative gate unipolar stress is observed and attributed to charge detrapping behavior in N/sub 2/O oxides. A large reduction in time-to-breakdown is observed under bipolar stress when the thickness is scaled below 60 AA. A physical model is suggested to explain this behavior. Overall, N/sub 2/O oxides show improved breakdown properties compared with pure SiO/sub 2/. >

High-field breakdown in thin oxides grown in N/sub 2/O ambient

Effects of oxide growth temperature on time-dependent dielectric breakdown (TDDB) characteristics of thin (115 AA) N/sub 2/O-grown oxides are investigated and compared with those for conventional O/sub 2/-grown SiO/sub 2/ films with identical thickness. Results show that TDDB characteristics of N/sub 2/O oxides are strongly dependent on the growth temperature and, unlike conventional SiO/sub 2/, TDDB properties are much degraded for N/sub 2/O oxides with an increase in growth temperature. Large undulations at the Si/SiO/sub 2/ interface, caused by locally retarded oxide growth due to interfacial nitrogen, are suggested as a likely cause of degradation of TDDB characteristics in N/sub 2/O oxides grown at higher temperatures. >

Effects of growth temperature on TDDB characteristics of N/sub 2/O-grown oxides

The performance and reliability of p-channel MOSFETs utilizing ultrathin ( approximately 62 AA) gate dielectrics grown in pure N/sub 2/O ambient are reported. Unlike (reoxidized) NH/sub 3/-nitrided oxide devices, p-MOSFETs with N/sub 2/O-grown oxides show improved performance in both linear and saturation regions compared to control devices with gate oxides grown in O/sub 2/. Because both electron and hole trapping are suppressed in N/sub 2/O-grown oxides, the resulting p-MOSFETs show considerably enhanced immunity to channel hot-electron and -hole-induced degradation (e.g., hot-electron-induced punchthrough). >

P-channel MOSFET's with ultrathin N/sub 2/O gate oxides

Stress-induced leakage current (SILC) is studied in ultrathin ( approximately 50 AA) gate oxides grown in N/sub 2/O or O/sub 2/ ambient, using rapid thermal processing (N/sub 2/O oxide or control oxide, respectively). MOS capacitors with N/sub 2/O oxides exhibit much suppressed SILC compared to the control oxide for successive ramp-up, constant voltage DC, and AC (bipolar and unipolar) stresses. The mechanism for SILC is discussed, and the suppressed SILC in N/sub 2/O oxide is attributed to suppressed interface state generation due to nitrogen incorporation at the Si/SUO/sub 2/ interface during N/sub 2/O oxidation. >

High-field-induced leakage in ultrathin N/sub 2/O oxides

Comparison of dielectric wear-out between oxides grown in O2 and N2O

Electrical and reliability properties of MOS gate oxides prepared by furnace oxidation of Si in an N/sub 2/O ambient have been studied. The thickness uniformity of N/sub 2/O oxides is comparable to that of the control oxides grown at the same temperature. Time-zero breakdown tests reveal similar breakdown field distributions for both oxides. Devices with N/sub 2/O gate oxides are less susceptible to charge trapping, interface state generation, and transconductance degradation under electrical stressing than devices with gate oxides grown in O/sub 2/. Significant improvement in time-to-breakdown (t/sub BD/) and charge-to-breakdown (Q/sub BD/) under substrate electron injection was observed for N/sub 2/O oxides. Under gate injection, Q/sub BD/ and t/sub BD/ values of both N/sub 2/O and control oxides are comparable. This stress polarity dependence is explained by the nitrogen pile-up at the SiO/sub 2//substrate interface. >

Comparison of dielectric wear-out between oxides grown in O/sub 2/ and N/sub 2/O

A comprehensive review of chemical composition and electrical properties is presented for thin gate oxides with small amounts of nitrogen or fluorine, incorporated by rapid thermal processing. Electrical properties of these chemically modified oxides are correlated with the changes in chemical composition and the resulting structural modifications. Qualitative models described in some of the earlier works are used to establish these correlations. It is concluded that the changes in chemical composition of Si02 can be controlled to realize superior gate dielectrics for application in ULSI MOS devices.

Chemically modified ultrathin oxides fabricated by rapid thermal processing

This paper reports the performance and reliability of p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) with ultrathin (65 A) low pressure chemical-vapor-deposited (LPCVD) gate oxides annealed in N2 ambient as compared to those with thermal gate oxides of identical thickness. It is shown that MOSFETs with CVD gate oxides exhibit better initial performance (transconductance, current drivability, and effective hole mobility) and enhanced reliability (transconductance degradation, threshold voltage shift, enhancement in gate-induced drain leakage, and hot-electron-induced punchthrough) than the MOSFETs with thermal gate oxides. Furthermore, significantly improved time-dependent dielectric breakdown characteristic of CVD gate oxide has been demonstrated. Strainless CVD SiO2 after proper post-deposition annealing and the substrate-independent film formation mechanism are speculated to result in the improvements in performance and reliability of CVD oxide devices.

Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides

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Papers

Comparison of dielectric wear-out between oxides grown in O2 and N2O

Comparison of dielectric wear-out between oxides grown in O/sub 2/ and N/sub 2/O

Chemically modified ultrathin oxides fabricated by rapid thermal processing

Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides