This chapter is devoted to the strain properties of multilayer thin-film materials based on metals. Although this problem is the subject of study researchers, many questions remain poorly understood, which include the development of a theoretical model of the tensoresistive effect for multilayer films and a comparative analysis of its features in the range of elastic and plastic strain and temperature dependence of strain coefficient. This work also focuses on the question about increase of strain coefficient through the surface, grain boundary and interface scattering of electrons. The purpose of this work is analytical analysis of the known theoretical models of tensoresistive effect: linearized and three-dimensional Tellier–Tosser–Pichard models for one layer and semiphenomenological model for multilayer by authors of this work, which takes into account the dependence of the electron transport parameters (mean free path, specularity parameter and transmission coefficient at the boundary and interface). The purpose of this work was to compare the theoretical models and experimental results obtained in the field of elastic deformation and analysis of the temperature dependence of strain coefficient and the insufficiently explored question of magneto-deformation effect. The presented results allow us to more accurately describe the physical processes in the multilayer films under strain, especially to understand the processes in the elastic and plastic strain and the conclusion on the application of multilayer films as sensitive elements of sensors strain, magnetic field and pressure.

Future Strain Properties of Multilayer Film Materials

Results of experimental researches of electrophysical properties of Multilayer film systems Ni/V, and Cr/Fe which was formed on the basis of nanocrystals (V, Cr and Fe) and high dispersed Ni films are presented. It is carried out comparisons of experimental and calculated on the basis ratio for films alloy (Cr/Fe) and semiphenomenological model (Ni/V) results. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Electrophysical properties of Ni/V and Cr/Fe multilayer films

We report on the preparation of lattice matched heteroepitaxial films in a dc magnetron sputtering discharge. CrxMo1−x thin films were grown on MgO(1 0 0) substrate, choosing the composition of the binary metal alloy to be x=0.63, so that the film is lattice matched to the substrate when the 〈100〉 orientation of the film is parallel to the 〈110〉 orientation of the substrate. Ex situ x-ray diffraction and low angle x-ray reflectivity measurements were performed to determine the film structure, film thickness, as well as the surface and interface roughness. We determine the optimum growth temperature to be 200 °C. Using this temperature 0.4–15 nm thick films were prepared. The resistivity of the films was measured ex situ using a four-point-probe. The resistivity dropped rapidly with increasing thickness. The resistivity versus thickness data was found to be well described with Namba’s model, which includes film roughness as a parameter.

Preparation and characterization of magnetron sputtered, ultra-thin Cr0.63Mo0.37 films on MgO

Effect of the Tensosensitivity in Metal Film Materials

In the paper presents the results of the study of the crystalline structure and electrophysical properties of film high-entropy film alloys based on Al, Cu, Ni, Fe, Co and Cr. It is established that in film samples, formed by the layer condensation of separate components, the fcc1 phase based on Cu is immediately formed (lattice parameter a = 0.360 - 0.365 nm) or this process can be two-step: first the phase composition corresponds to fcc1 and fcc2 (a = 0.402 - 0.405 nm), and then homogenizes into fcc1. The dimensional dependence of TCR versus total thickness of the multilayer in the initial state of the film system is obtained. On the basis of this dependence, for the first time in the practice of film HEA, the basic parameters of electric transport based on Fuchs-Sondheimer and Tellier-Tosser-Pichard models were determined.

Thermal Coefficient of Resistance of High-entropy Film Alloys

A three-dimensional model of strain sensitivity proposed by [Tellier, Tosser: Thin Solid Films 59 (1979) 163; Tosser, Tellier and Pichard: J. Mater. Sci. 16 (1981) 944] has been tested for thin Cr, Cu and Co films. The films were obtained by electron-beam evaporation in a vacuum of 10-4–10-5 Pa. Film structure stabilization was carried out by heating and cooling at the rate of 3 K/min in the range of 300 to 520 K. The identity of properties of the films obtained on the glass (during the termal coefficient of resistance (TCR) measuring) and the textolite glass (during the strain-sensitivity coefficient (SSC) measuring) substrates was examined according to Vand method on lattice distortion energy spectra for films of different thickness, where the spectra were calculated from the resistance-temperature data. It has been shown that the experimental results of the strain sensitivity agree with the calculated ones only under the assumption of size dependence of the electron mean-free path.

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Experimental Test of a Three-Dimensional Model for Electrophysical Properties of Metal Films

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Experimental Test of a Three-Dimensional Model for Electrophysical Properties of Metal Films