Ivan Pelant
Academy of Sciences of the Czech Republic
150 Papers
1.5K Citations
Ivan Pelant is an academic researcher from Academy of Sciences of the Czech Republic. The author has contributed to research in topics: Silicon & Photoluminescence. The author has an hindex of 27, co-authored 150 publications.
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Papers
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Luminescence Spectroscopy of Semiconductors
Ivan Pelant,Jan Valenta +1 more
- 24 Mar 2012
TL;DR: In this article, the authors present a detailed description of luminescence spectroscopy processes in low-dimensional semiconductors, including the effects of high excitation in lowdimensional structures.
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On the origin of the fast photoluminescence band in small silicon nanoparticles
Jan Valenta,Anna Fucikova,Ivan Pelant,Kateřina Kůsová,K. Dohnalová,A Aleknavičius,A Aleknavičius,Ondřej Cibulka,A. Fojtik,Gerald Kada +9 more
TL;DR: In this paper, a detailed study of photoluminescence excitation spectra in a wide range of excitation photon energies (270-420nm) reveals specific behavior of the Stokes shift of the fast ultraviolet-blue photoluminance (PL) band that agrees well with theoretical calculation of optical transitions in small silicon nanocrystals.
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Optical gain in porous silicon grains embedded in sol-gel derived SiO2 matrix under femtosecond excitation
K. Luterová,K. Dohnalová,Vladimir Svrcek,Ivan Pelant,Jean-Pierre Likforman,Olivier Crégut,Pierre Gilliot,B. Hönerlage +7 more
TL;DR: Porous silicon grains embedded in the phosphorus doped SiO2 matrix exhibit improved photoluminesce properties and better stability in comparison with native porous silicon samples as mentioned in this paper, and they have tested this material for the presence of room temperature optical amplification under femtosecond (100 fs, 395 nm) excitation.
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Direct Bandgap Silicon: Tensile‐Strained Silicon Nanocrystals
Kateřina Kůsová,Prokop Hapala,Jan Valenta,Pavel Jelínek,Ondřej Cibulka,Lukáš Ondič,Ivan Pelant +6 more
TL;DR: In this article, the authors propose a solution to the long-standing problem of silicon nanocrystals being an indirect-gap material and consequently is an inefficient light emitter. But they also show that silicon can be transformed into a material with fundamental direct bandgap via a concerted action of quantum confinement and tensile strain, which can be used for the integration of optoelectronics on silicon wafers.
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