Islam Sayed
University of California, Santa Barbara
30 Papers
86 Citations
Islam Sayed is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Dielectric & Solar cell. The author has an hindex of 7, co-authored 27 publications. Previous affiliations of Islam Sayed include North Carolina State University & National Renewable Energy Laboratory.
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Papers
100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%
TL;DR: In this paper, a hundred period lattice matched InGaAsP/InGaP superlattice solar cell with more than 65% absorbing GaAsP well resulted in more than 2× improvement in EQE values than previously reported strain balanced approaches.
21
High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface
TL;DR: In this paper, the peak tunneling current (Jpk) was used as a diagnostic tool to study the behavior of the Te dopant at the TJ interface, guided by device modeling, to modify the Te source shutoff procedure and the growth rate.
20
Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN
Islam Sayed,Wenjian Liu,Silvia H. Chan,Chirag Gupta,Matthew Guidry,Haoran Li,Stacia Keller,Umesh K. Mishra +7 more
TL;DR: In this article, the fixed charges, densities of near-interface trap states, and interface trap density in N-polar Si3N4 and SiO2 metal insulator semiconductor capacitors (MISCAPs) are quantified using a capacitance-voltage measurement method which is assisted by ultraviolet illumination and applied voltage-stress.
16
Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001)
TL;DR: In this article, the interface and bulk properties of aluminum-silicon-oxide (AlSiO) dielectric grown by metal-organic chemical vapor deposition (MOCVD) on (001) β-Ga2O3 were investigated systematically using a deep UV-assisted capacitance-voltage methodology.
15
Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors
TL;DR: In this article, an acceptor-like trap at positive polarization interfaces in p-type III-nitride semiconductor heterostructures, using N-polar P-type GaN/Al N/AlGaN superlattices as a demonstration platform, was proposed.
13