Irmantas Kašalynas
Vilnius University
191 Papers
485 Citations
Irmantas Kašalynas is an academic researcher from Vilnius University. The author has contributed to research in topics: Terahertz radiation & Terahertz spectroscopy and technology. The author has an hindex of 23, co-authored 170 publications.
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Papers
Experimental demonstration of efficient pulsed terahertz emission from a stacked GaAs/AlGaAs p-i-n-i heterostructure
Alvydas Lisauskas,A. Reklaitis,R. Venckevicius,Irmantas Kašalynas,Gintaras Valušis,G. Grigaliūnaitė–Vonsevičienė,H. Maestre,J. Schmidt,Volker Blank,Mark D. Thomson,Hartmut G. Roskos,Klaus Köhler +11 more
TL;DR: In this article, a pulsed optoelectronic terahertz emitter based on a δ-doped p-i-n-i GaAs/AlxGa1−xAs heterostructure, which was suggested by Reklaitis, is investigated experimentally.
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Effects of inclusion dimensions and p-type doping in the terahertz spectra of composite materials containing bundles of single-wall carbon nanotubes
Mikhail V. Shuba,Alesia Paddubskaya,Polina Kuzhir,Gregory Ya. Slepyan,Dalius Seliuta,Irmantas Kašalynas,Gintaras Valušis,Akhlesh Lakhtakia +7 more
TL;DR: In this paper, the authors investigated the influence of the cross-sectional diameter and acid-induced p-type doping on the terahertz conductivity peaks of single-wall carbon nanotubes (SWNTs).
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On-chip integration of laser-ablated zone plates for detection enhancement of inGaAs bow-tie terahertz detectors
Linas Minkevičius,Vincas Tamošiūnas,K. Madeikis,Bogdan Voisiat,Irmantas Kašalynas,Gintaras Valušis +5 more
TL;DR: In this article, an order of magnitude detection enhancement of bow-tie-shaped InGaAs-based terahertz detectors by on-chip incorporation of the secondary diffractive optics is reported.
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Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate
Roman B. Adamov,Daniil Pashnev,Vadim A. Shalygin,M. D. Moldavskaya,Maxim Ya. Vinnichenko,Vytautas Janonis,Justinas Jorudas,Saulius Tumėnas,Pawel Prystawko,M. Krysko,Maciej Sakowicz,Irmantas Kašalynas +11 more
TL;DR: In this paper, the high-frequency characteristics of two-dimensional electron gas and GaN buffer layers in AlGaN/AlN/GaN heterostructures grown on a semi-insulating SiC substrate were investigated.
15
Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3–4 µm wavelength range
B. Sherliker,Matthew P. Halsall,Irmantas Kašalynas,Dalius Seliuta,Gintaras Valušis,Mikas Vengris,Martynas Barkauskas,Valdas Sirutkaitis,Paul Harrison,V. D. Jovanović,Dragan Indjin,Zoran Ikonic,Peter J. Parbrook,Tao Wang,Philip Derek Buckle +14 more
TL;DR: In this article, experimental results showing room temperature normal incidence mid-infrared detection by AlGaN/GaN quantum well infrared photodetectors are presented, which have intersubband transitions corresponding to wavelengths in the region of 3 and 4 µm, where strong absorption in a sapphire substrate dominates.
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