Diffusion of copper in thin TiN films

General aspects of barrier layers for very-large-scale integration applications II: Practice

Thin films of W-N alloys have been prepared by reactive rf sputtering from a W target. Alloy compositions up to about 65at.%N, can be achieved by this method. The structure and stability of these films have been studied using x-ray diffraction analysis. Between 18 and 38at.%N, amorphous phases are formed with crystallization temperatures up to above 600°C. All the films gradually release N upon vacuum annealing and decompose into αW between 700 and 800°C in vacuo. Application of W-N alloys as diffusion barriers in a Si metallization scheme is discussed.

Characterization of W-N alloys formed by sputter deposition

Characterization of electronic devices and materials by surface-sensitive analytical techniques

Amorphous NiNW film as a diffusion barrier between aluminum and silicon

In a contact metallization employing Mo as a thin‐film ’’diffusion barrier’’, we have observed that this refractory metal does not exhibit optimum barrier properties when rf sputtered in argon. It was found that the use of ∠1500 A of rf‐sputtered Mo between Si and Au results in extensive Si and Au intermixing in <30 min at 450°C. Auger depth profile analysis confirmed that both Si and Au had moved through the Mo. This would preclude subsequent processing involving elevated temperature, as in a Silox deposition. The intermixing appears to proceed via a grain boundary diffusion mechanism (Ea=0.21 eV). Significant improvement in the intermixing time was obtained by the controlled incorporation of N2 into the Mo via reactive rf sputtering. A possible model for this improvement will be presented using the data obtained from microstructural analysis of the nitrided and unnitrided films.

Improvement of the diffusion barrier properties of rf‐sputtered molybdenum

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Improvement of the diffusion barrier properties of rf‐sputtered molybdenum