Analytical application of particle induced X-ray emission

A review of thin-film aluminide formation

A titanium-tungsten-nitride/titanium-tungsten/gold (TiWN/TiW/Au) packaging interconnect metallization scheme is used to provide electrical contact to chip level interconnect metallization on a semiconductor substrate. The TiWN/TiW/Au packaging interconnect metallization scheme provides for good adhesion and barrier properties that withstand high temperatures and improve the reliability of the semiconductor chip. The TiWN layer provides good adhesion to the chip level interconnect metallization and the passivation layer. It also provides improved barrier properties to prevent the diffusion of other metal atoms through it. The TiW layer provides good adhesion to the gold metal layer. A gold bump may be electroplated to the gold layer and automatically bonded to a conductive lead of a tape in TAB packaging; or a wire bonded to the gold layer in conventional packaging.

Metallization scheme providing adhesion and barrier properties

While thin films of TiN and TaN are good diffusion barriers in contact structures which use nickel or gold as a top layer, they show poor barrier properties if aluminum is used as a top layer. It is shown in this letter that stable high‐temperature contacts on silicon semiconductor devices can be produced by using intermetallic compounds of aluminum in combination with TiN and TaN as barrier materials instead of pure aluminum.

High-temperature contact structures for silicon semiconductor devices

Recently transition‐metal nitrides and carbides have received great interest as diffusion barrier materials in contact structures for silicon semiconductor devices. Excellent stability of the contact structure is achievable through heat treatments of up to 600 °C when Ni is used as the top metal layer. However, the same transition‐metal compounds show poor barrier properties with Al as the top layer if heat treated to 600 °C. We have therefore investigated the failure mechanism of transition‐metal nitride and carbide barrier materials in Al overlayer metallizations. This knowledge has enabled us to develop high‐temperature contact structures for silicon semiconductor devices by using an intermetallic compound of Al instead of plain Al for the top layer.

Interfacial reactions between aluminum and transition‐metal nitride and carbide films

An assessment of ion-induced X-rays for analysis

Studies of the Ti-W/Au metallization on aluminum

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An assessment of ion-induced X-rays for analysis

Studies of the Ti-W/Au metallization on aluminum