Particle detectors were made using semiconductor epitaxial 4H–SiC as the detection medium. The investigated detectors are formed by Schottky contact (Au) on the epitaxial layer and an ohmic contact on the back side of 4H–SiC substrates with different micropipe densities from CREE. For radiation hardness studies, the detectors have been irradiated with protons ( 24 GeV /c ) at a fluence of about 10 14 cm −2 and with electrons (8.2 MeV ) and gamma-rays ( 60 Co source) at doses ranging from 0 to 40 Mrad . We present experimental data on the charge collection properties by using 5.48, 4.14 and 2.00 MeV α-particles impinging on the Schottky contact. Hundred percent charge collection efficiency (CCE) is demonstrated for reverse voltages higher than the one needed to have a depletion region equal to the α-particle projected range, even after the irradiation at the highest dose. By comparing measured CCE values with the outcomes of drift–diffusion simulations, values are inferred for the hole lifetime, τp, within the neutral region of the charge carrier generation layer. τp was found to decrease with increasing radiation levels, ranging from 300 ns in non-irradiated detectors to 3 ns in the most irradiated ones. The diffusion contribution of the minority charge carriers to CCE is pointed out.

/pdf/radiation-tolerance-of-epitaxial-silicon-carbide-detectors-3hkxmoqm1w.pdf

Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays

Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest.

https://iopscience.iop.org/article/10.1088/0034-4885/70/4/R01/pdf

Particle interaction and displacement damage in silicon devices operated in radiation environments

The radiation detection properties of Schottky detectors made on epitaxial layers of 4H silicon carbide were evaluated. Exposure to 5.48 MeV alpha particles from a 241 Am source in vacuum led to robust signals from the detectors. The collection of the charge carriers was found to increase linearly with the square root of the applied reverse bias.

Epitaxial silicon carbide charge particle detectors

1×1 cm 2 silicon pad p + –n–n + detectors were irradiated with fast neutrons from the TRIGA research reactor in Ljubljana to fluences from 5×10 13 to 10 14 n/cm 2 . The observed time development of annealing of the full-depletion voltage (FDV) could be fitted by a constant and two exponentials. The characteristic time of the fast component is 4 h, independent of temperature in the interval 0–15°C. A comparison of MESA and planar pad detectors shows a 20–30% lower FDV for the MESA. A search for a flux dependence of the radiation damage was performed in the range from 2×10 8 to 5×10 15  n/cm 2 s and no systematic differences were observed.

Time development and flux dependence of neutron-irradiation induced defects in silicon pad detectors

Charge collection efficiency of 300 μm thick silicon detectors, previously irradiated at 2.23×1015 n/cm2, has been measured at 4.2, 77 and 195 K. The recovery measured at a bias voltage of 250 V leads to a most probable signal for minimum ionizing particles of 13 000 electrons, preserving its fast characteristics (

/pdf/evidence-for-charge-collection-efficiency-recovery-in-405igw7ci5.pdf

Evidence for charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures

Charge collection and noise were studied in non-irradiated and irradiated silicon detectors as a function of temperature (T), shaping time (θ) and fluence (Φ), up to about 1.2 × 1014 protons cm−2, for minimum ionizing electrons yielded by a 106Ru source. The noise of irradiated detectors is found dominated for short shaping times (θ ≤ 50 ns) by a series noise component while for longer shaping time (θ ≥ 80 ns) a parallel noise component (correlated with the reverse current) prevails. For non-irradiated detectors, where the reverse current is three orders of magnitude smaller compared with irradiated detectors, the series noise dominates over the whole range of shaping times investigated (20–150 ns). A signal degradation is observed for irradiated detectors. However, the signal can be distinguished from noise, even after a fluence of about 1.2 × 1014 protons cm−2, at a temperature of 6°C and with a shaping time typical of LHC inter-bunch crossing time (20–30 ns). The measurement of the signal as a function of voltage shows that irradiated detectors depleted at 50% of the full depletion voltage can still provide a measurable signal-to-noise ratio.

/pdf/study-of-charge-collection-and-noise-in-non-irradiated-and-349k97mt2s.pdf

Study of charge collection and noise in non-irradiated and irradiated silicon detectors

High resistivity ion-implanted silicon pad detectors have been irradiated at +20°C, +10°C, 0°C and −20°C with 24 GeV/c protons at a flux of ∼ 5 × 109cm−2s−1, up to fluences of ∼ 1.1 × 1014cm−2, and maintained at these temperatures during several months after the end of irradiation. The change of the diode reverse current, full depletion voltage and collection efficiency of the charge, deposited by relativistic electrons, are presented as a function of the proton fluence and of annealing time. It is found that operating the detectors below +10°C limits the diode reverse current and the bias voltage necessary to achieve full depletion. Moreover, at these temperatures, the charge collection efficiency for an integration time of 20 ns (typical of LHC operation) is better than 90% for 300 μm detectors irradiated to a fluence of 1014 cm−2 and biased at 160 V.

Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C

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Study of charge collection and noise in non-irradiated and irradiated silicon detectors

Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C