Results are reported from a beam test of prototype silicon microstrip detectors and front-end electronics developed for use in the LHC detector ATLAS. The detector assemblies (“modules”) were 12 cm long and were read out with binary electronics. Both irradiated and unirradiated modules were measured in a 1.56 T magnetic field for efficiency, noise occupancy, and position resolution as a function of bias voltage, binary hit threshold, and detector rotation angle with respect to the beam direction.

/pdf/beam-test-of-the-atlas-silicon-detector-modules-1551wup6aw.pdf

Beam test of the ATLAS silicon detector modules

detector with small angle stereo readout. Readout will be AC-coupled from n-type implant strips in n-bulk crystals. increased depletion voltage [3], the junctions will be at the nstrips allowing the possibility of operation under partial depletion of the silicon. The readout electronics [4] employs a 1 bit binary scheme whereby only hits above a single threshold are recorded. In such a scheme the required resolution is achieved with 75pm pitch detectors. Noise OccuPancY must be well below not to exceed the bandwidth of the data transmission system. A key Derformance reauirement of such a system is to maintain are reprted from a beam test Of Prototype After radiation induced type inversion of the bulk and micro strip detectors and front-end electronics designed for use at the LHC. The detector assemblies were 12 cm long and were read out with binary electronics. Both irradiated and unirradiated assemblies were measured in a 1.56T magnetic field for efficiency, noise occupancy, and resolution as a function of bias voltage, binary hit threshold, and detector rotation angle with respect to the beam direction. Measurements were also performed at a particle flux comparable to the one expected at the LHC.

http://ieeexplore.ieee.org/iel3/4502/12970/00590936.pdf

BEAM TEST of the ATLAS SILICON DETECTOR MODULES with BINARY READOUT in the CERN H8 BEAM in 19961

This thesis presents the results obtained with radiation detectors made with Schottky barrier contacts to GaAs. Three types of detectors are investigated, namely pads, microstrips and pixellated detectors on both semi-insulating un-doped material as well as on epitaxial material. Tests, devised and carried out by the author, which use a variety of radiation sources to characterise the devices are described. Read out electronics used in conjunction with these detectors are described as well as the tests performed in high energy particle beams at CERN, the European Centre for Nuclear Research. Irradiations of the detectors have also been carried out at CERN, in the Rutherford Laboratory and at a commercial site in France to measure the "radiation hardness" of these detectors. Their suitability for use in the High Energy Physics environment has not been proven due to the progress made in increasing the resistance of detectors made from silicon to the high radiation dose. Initial work on pixellated detectors for HEP applications has turned to the field of X- ray imaging as a natural alternative where GaAs has much to offer. Measurements have been done to evaluate the imaging capabilities of GaAs detectors using read out electronics developed for HEP. A 320 x 240 array of bump bonded pixels each 38 mum square has been tested using a charge integrating readout with results indicating a performance of better than 10 line pairs per mm. Epitaxially grown material has been investigated and shown to perform well as a detection medium. The purest material that has been tested still has a free carrier concentration that is at least an order of magnitude too high. An initial investigation into a novel photonic detector read out scheme is presented. The idea involves the use of reflective optical modulators to readout the charge from the detector element. A modulator was designed and successfully tested in order to demonstrate that this is possible. The integrated detector/modulator did not perform as hoped and alternative directions have been suggested.

GaAs radiation detectors

The previous prototype of the double-sided silicon microstrip detectors (DSSDs) with integrated coupling capacitors formed by oxide-nitride-oxide (ONO) dielectric film showed band-to-band tunneling (BBT) current at the field-plate structure for the N/sup +/ strip, which represented a limitation to the biasing configuration. We report improved characteristics of the modified field-plate structure and the wide-pitch n-side readout using a multi p-stop structure combined thereon.

/pdf/performance-of-a-double-sided-silicon-microstrip-detector-4k3o2g2vgg.pdf

Performance of a double-sided silicon microstrip detector with a wide-pitch N-side readout using a field-plate and a multi P-stop structure

Beam test of the ATLAS silicon detector modules with binary readout in the CERN H8 beam in 1996

ATLAS Silicon Strip Beam Test Results

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ATLAS Silicon Strip Beam Test Results