A framework is presented for understanding carrier generation and recombination mechanisms in irradiated silicon devices. Data obtained by many workers for irradiated bulk material and devices are analyzed and summarized, and key damage-factor dependences are identified. Measurements, simulations, and analyses support the conclusion that correlation of displacement damage effects with the rate of nonionizing energy loss (NIEL) for proton, neutron, pion, and heavy-ion bombardment is due to the dominant influence of defect subclusters. At low NIEL values ( 2times10-4 MeV-cm2/g), subclusters dominate. Enhanced carrier generation and recombination produced by those small disordered regions is considered. Modeling results are presented for behavior observed in the transition region between domination by isolated defects and by clusters. The model presented in this paper simultaneously accommodates defect cluster models and NIEL scaling phenomena in the same framework

A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices

In the present work, the formation of amorphous zones in 6H-SiC and 3C-SiC by low fluence (4×108 to 1×1012 cm−2) 420 keV Xe implantation at room temperature is investigated with positron beam analysis (PBA). By relating the fraction of positrons annihilating in amorphous zones obtained by PBA to stopping and range of ions in matter calculations in combination with a local damage level criterion for amorphization, the amorphous zones are characterized. Furthermore, the recovery by annealing of 6H-SiC after implantation with 2 different ion fluences (2×1010 and 2×1011 cm−2) is studied with PBA and a model assuming shrinkage of amorphous zones.

Thermal recovery of amorphous zones in 6H-SiC and 3C-SiC induced by low fluence 420 keV Xe irradiation

The role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diode

Gallium phosphide samples have been irradiated with 100 MeV 56Fe9+ ions for various ion fluences varying from 1×1011 to 1×1014 cm−2 at room temperature. Irradiated samples were characterized by Ram...

Raman scattering and FTIR studies of 100 MeV Fe9+ ion-irradiated gallium phosphide

Transmission Electron Microscopy (TEM) and Rutherford Backscattering (RBS) have been used to observe the spatially isolated disordered zones in InP resulting from 100 keV Au ion irradiation at room temperature. Studies were carried out in interval of irradiation fluences less than lower value of full amorphization fluence. Such a value of fluence, as was established in the studies, can be estimated of order ∼2.5 × 1013cm−2. The accumulation of damage due to the 100 keV Au ion irradiation was described in this material using a composite theoretical model accounting for both homogeneous and heterogeneous amorphization processes.

/pdf/rbs-and-tem-studies-of-indium-phosphide-irradiated-with-100-5bgbcgvyii.pdf

RBS and TEM studies of indium phosphide irradiated with 100 keV Au ions

Regrowth of heavy-ion implantation damage by electron beams

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Regrowth of heavy-ion implantation damage by electron beams