I. Jadli
7 Papers
5 Citations
I. Jadli is an academic researcher. The author has contributed to research in topics: Dewetting & Amorphous solid. The author has an hindex of 3, co-authored 7 publications.
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Papers
Mn-doped Ge self-assembled quantum dots via dewetting of thin films
TL;DR: In this article, the dewetting phenomenon at solid state by UHV annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO 2 thin film.
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Fabrication and characterization of magnetic porous silicon with curie temperature above room temperature
Mansour Aouassa,I. Jadli,M.A. Zrir,Hassen Maaref,Ridha Mghaieth,Luc Favre,Antoine Ronda,Isabelle Berbezier +7 more
TL;DR: In this article, the magnetic properties of manganese atoms are induced by ion implantation and a subsequent anodization of the substrate is done to turn it into porous silicon.
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Role of surface passivation on visible and infrared emission of Ge quantum dots formed by dewetting
Mansour Aouassa,M.A. Zrir,I. Jadli,L. Hassayoun,Ridha Mghaieth,Hassen Maaref,Luc Favre,Antoine Ronda,Isabelle Berbezier +8 more
TL;DR: In this paper, the dual action of oxide-related defects in the visible and infrared emission of germanium self-assembled quantum dots (QDs) is discussed, and the results of this work are helpful for optimizing the performance of the optoelectronic devices based on the infrared emissions of Ge nanocrystals.
Charge trapping properties of Ge nanocrystals grown via solid-state dewetting
I. Jadli,Mansour Aouassa,S. Johnston,Hassen Maaref,Luc Favre,Antoine Ronda,Isabelle Berbezier,Ridha Mghaieth +7 more
TL;DR: In this article, the authors report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method.
1
Analysis of composition and microstructures of Ge grown on porous silicon using Raman spectroscopy and transmission electron microscopy
Mansour Aouassa,I. Jadli,L. Hassayoun,Hassen Maaref,Gérard Panczer,Luc Favre,Antoine Ronda,Isabelle Berbezier +7 more
TL;DR: In this article, the composition and microstructure of Ge grown on porous silicon (PSi) by Molecular Beam Epitaxy (MBE) at different temperatures are examined using High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy.