A new 6.0kV/100A Super Cascode Power Module (SCPM) topology is proposed using dual serial strings of six SiC-JFETs with a common balancing circuit, and extendable to 8.0kV/200A for high-frequency, medium-voltage applications. Electrical and multi-physics simulations show improvements in dynamic response, and improved electro-thermal performance that exceed state-of-the-art Si-IGBT power module technology. The SCPM is fabricated and tested. Results are reported showing 47.8mΩ dynamic response, and ≤50ns rise and fall in current at 4kV for 110A switching from double-pulse testing (DPT).

6.0kV, 100A, 175kHz super cascode power module for medium voltage, high power applications

..........................................................................................................III ACKNOWLEDGEMENTS...................................................................................... V PUBLICATIONS ASSOCIATED WITH THIS THESIS......................................... VII CHAPTER

Silicon Carbide Devices in High Efficiency DC-DC Power Converters for Telecommunications

Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and measured data used to verify the model. The model also shows that the optimal number of gate fingers in the 10 to 20 range.

Transient Switching Behavior in Silicon MOSFET RF Switches

This work is concerned with the behaviour of a hybrid Si/SiC high voltage switch in multiple cascode configuration. The influences of the threshold voltage and of /spl beta/ current factor of the SiC medium power J-FET on the performance of the switch are evinced.

SiC devices parameters effects on the electrical behaviour of mCascode switch

The behavior of the MOS switch and of two cascode configurations are evaluated, by using OR-CAD simulations, and the resulting data are comparatively presented. By analytical and numerical investigations, the superior performance of the multiple cascode circuit is demonstrated.

Performance of SiC Cascode Switches with Si MOS Gate

The paper is concerned with the switching behaviour of the two hybrid Si/SiC high voltage cascode configurations, using OR-CAD simulations. The drive pulse parameters effects are extensively investigated. The cascode circuit with two SiC J-FETs features an easy control via the silicon MOS transistor and the ability of fast turn-on and turn off which are essential in high voltage/high speed applications.

Transient analysis of Si-MOS and SiC-JFET cascode power switches

A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the efficiency of this termination for SiC Schottky barrier diodes, obtained by using high-k dielectrics. The effect of the relative dielectrics permittivity and ramp parameters are investigated for punch-through and non punch-through devices. Optimal structure termination parameters were identified

Breakdown performances improvements of SiC diodes using high-k dielectrics

The simple planar edge termination with oxide ramp at the periphery of the contact is extended to SiC pn junction diodes. This paper focuses on the study of the UV detection performances of 6H-SiC Schottky and junction barrier diodes with oxide ramp termination by numerical MEDICI simulation. The devices show a high responsivity and quantum efficiency in the spectral range from 250 to 350 nm up to 800 K. For transient photoresponse at a pulse light excitation we found that Schottky diodes are superior to pn diodes with the same parameters.

UV detection properties of epitaxial 6H-SiC diodes with oxide ramp termination

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Papers

Transient analysis of Si-MOS and SiC-JFET cascode power switches

SiC devices parameters effects on the electrical behaviour of mCascode switch

Breakdown performances improvements of SiC diodes using high-k dielectrics

UV detection properties of epitaxial 6H-SiC diodes with oxide ramp termination