Magnetism is a very fascinating and dynamic field Especially in the last 30 years it has experienced many major advances in the full range from novel fundamental phenomena to new products Applications such as hard disk drives and magnetic sensors are part of our daily life, and new applications, such as in non-volatile computer random access memory, are expected to surface shortly Thus it is timely for describing the current status, and current and future challenges in the form of a Roadmap article This 2014 Magnetism Roadmap provides a view on several selected, currently very active innovative developments It consists of 12 sections, each written by an expert in the field and addressing a specific subject, with strong emphasize on future potential This Roadmap cannot cover the entire field We have selected several highly relevant areas without attempting to provide a full review - a future update will have room for more topics The scope covers mostly nano-magnetic phenomena and applications, where surfaces and interfaces provide additional functionality New developments in fundamental topics such as interacting nano-elements, novel magnon-based spintronics concepts, spin-orbit torques and spin-caloric phenomena are addressed New materials, such as organic magnetic materials and permanent magnets are covered New applications are presented such as nano-magnetic logic, non-local and domain-wall based devices, heat-assisted magnetic recording, magnetic random access memory, and applications in biotechnology May the Roadmap serve as a guideline for future emerging research directions in modern magnetism

https://iopscience.iop.org/article/10.1088/0022-3727/47/33/333001/pdf

The 2014 Magnetism Roadmap

Modern fabrication technology has enabled the study of submicron ferromagnetic strips with a particularly simple domain structure, allowing single, well-defined domain walls to be isolated and characterized. However, these domain walls have complex field-driven dynamics. The wall velocity initially increases with field, but above a certain threshold the domain wall abruptly slows down, accompanied by periodic transformations of the domain wall structure. This behaviour is potentially detrimental to the speed and proper functioning of proposed domain-wall-based devices, and although methods for suppression of the breakdown have been demonstrated in simulations, a convincing experimental demonstration is lacking. Here, we show experimentally that a series of cross-shaped traps acts to prevent transformations of the domain wall structure and increase the domain wall velocity by a factor of four compared to the maximum velocity on a plain strip. Our results suggest a route to faster and more reliable domain wall devices for memory, logic and sensing.

Fast domain wall motion in magnetic comb structures

Micromagnetic simulations of magnetoelastic nanostructures traditionally rely on either the Stoner-Wohlfarth model or the Landau?Lifshitz-Gilbert (LLG) model, assuming uniform strain (and/or assuming uniform magnetization). While the uniform strain assumption is reasonable when modeling magnetoelastic thin films, this constant strain approach becomes increasingly inaccurate for smaller in-plane nanoscale structures. This paper presents analytical work intended to significantly improve the simulation of finite structures by fully coupling the LLG model with elastodynamics, i.e., the partial differential equations are intrinsically coupled. The coupled equations developed in this manuscript, along with the Stoner-Wohlfarth model and the LLG (constant strain) model are compared to experimental data on nickel nanostructures. The nickel nanostructures are 100???300???35 nm single domain elements that are fabricated on a Si/SiO2 substrate; these nanostructures are mechanically strained when they experience an applied magnetic field, which is used to generate M vs H curves. Results reveal that this paper?s fully-coupled approach corresponds the best with the experimental data on coercive field changes. This more sophisticated modeling technique is critical for guiding the design process of future nanoscale strain-mediated multiferroic elements, such as those needed in memory systems.

https://iopscience.iop.org/article/10.1088/0957-4484/25/43/435701/pdf

Modeling of magnetoelastic nanostructures with a fully coupled mechanical-micromagnetic model

We present experimental results on the displacement of a domain wall by injection of a dc current through the wall. The samples are 1 micron wide long stripes of a CoO/Co/Cu/NiFe classical spin valve structure. 
The stripes have been patterned by electron beam lithography. A neck has been defined at 1/3 of the total length of the stripe and is a pinning center for the domain walls, as shown by the steps of the giant magnetoresistance curves at intermediate levels (1/3 or 2/3) between the resistances corresponding to the parallel and antiparallel configurations. We show by electric transport measurements that, once a wall is trapped, it can be moved by injecting a dc current higher than a threshold current of the order of magnitude of 10^7 A/cm^2. We discuss the different possible origins of this effect, i.e. local magnetic field created by the current and/or spin transfer from spin polarized current.

Switching the magnetic configuration of a spin valve by current induced domain wall motion

We study domain wall dynamics in Permalloy nanowires excited by alternating spin-polarized current applied perpendicular to the nanowire. Spin torque ferromagnetic resonance measurements reveal that domain wall oscillations at a pinning site in the nanowire can be excited with velocities as high as 800 m/s at current densities below 10 7 A/cm 2 .

/pdf/rapid-domain-wall-motion-in-permalloy-nanowires-excited-by-a-2e8c5onnfb.pdf

Rapid domain wall motion in permalloy nanowires excited by a spin-polarized current applied perpendicular to the nanowire.

We report the real time study of field driven domain wall (DW) motion in giant magnetoresistance nanostrips under the influence of both longitudinal and transverse fields. We have found clear evidence that transverse fields influence the DW dynamics below and above the Walker field [N. L. Schryer and L. R. Walker, J. Appl. Phys. 45, 5406 (1974)] drastically. We show the suppression of the Walker breakdown process and a huge enhancement in DW velocity below the Walker field. The maximum velocity reported here is 4500 m/s.

Experimental study of domain wall motion in long nanostrips under the influence of a transverse field

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Experimental study of domain wall motion in long nanostrips under the influence of a transverse field