Nonmetallic crystals with high thermal conductivity

Single‐crystal layers of AlN have been grown on sapphire substrates between 1000 and 1100 °C by vapor‐phase reaction of aluminum chlorides with ammonia. The purity, color, crystallinity, growth morphology, and electrical resistivity of the epitaxial layers have been investigated. Infrared specular reflection measurements showed the presence of an appreciable strain at the AlN‐sapphire epitaxy interface. Optical absorption data strongly suggest the AlN is a direct band‐gap material with a value of about 6.2 eV at room temperature.

Epitaxially grown AlN and its optical band gap

Growth of high purity AlN crystals

In the early 1970s in Japan, the United States and France it was found that additions of nitrogen into aluminum oxide resulted in new spinel-like phases. At about the same time there was much increased interest in oxynitrides, stimulated by Professor K. Jack in the UK and Y. Oyama in Japan. Following these activities a major research program in this area was initiated at the Army Materials and Mechanics Research Center in Watertown, Massachusetts in 1974. These efforts resulted in the first complete Al2O3–AlN phase equilibrium diagram and a process to reactively sinter to nearly full density, translucent aluminum oxynitride spinel ceramic, which was named AlON. Subsequently, the Raytheon Company further developed AlON into a highly transparent material (ALON™) with many applications including transparent armor and EM domes and windows, among others—the technology was recently transferred to the Surmet Corporation. This paper will review the early history, phase equilibrium, crystal chemistry, and properties of this material, along with more recent work in our laboratory on transient liquid phase sintering and new data on lattice parameter measurements. In addition, recent results of collaborative work on AlON's dynamic mechanical properties using plate impact, Kolsky bar and edge-on impact (EoI) experimental techniques, including preliminary modeling at the microstructural scale of AlON in the EoI test, will be presented.

AlON: A brief history of its emergence and evolution

Aluminum oxynitride spinel (ALON) is a relatively new ceramic which can be processed into fully dense transparent material. This material could replace alumina in a variety of applications, especially where optical transparency is important. This report reviews the current status of ALON, including phase equilibria, processing and properties.

Aluminum oxynitride spinel: A review

Luminescence in the System Al2 O 3 ‐ AIN

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Luminescence in the System Al2 O 3 ‐ AIN