Achieving high mobility and bias stability is a challenging obstacle in the advancement of organic thin-film transistors (OTFTs). To this end, the fabrication of high-quality organic semiconductor (OSC) thin films is critical for OTFTs. Self-assembled monolayers (SAMs) have been used as growth templates for high-crystalline OSC thin films. Despite significant research progress in the growth of OSC on SAMs, a detailed understanding of the growth mechanism of the OSC thin films on a SAM template is lacking, which has limited its use. In this study, the effects of the structure (thickness and molecular packing) of SAM on the nucleation and growth behavior of the OSC thin films were investigated. We found that disordered SAM molecules assisted in the surface diffusion of the OSC molecules and resulted in a small nucleation density and large grain size of the OSC thin films. Moreover, a thick SAM with disordered SAM molecules on the top was found to be beneficial for the high mobility and bias stability of the OTFTs.

Disordered Phase-Assisted Growth of Organic Semiconductor Crystals on Self-Assembled Monolayer Templates.

Endohedral metallofullerenes (EMFs) showcase unique properties such as their capacity to stabilize isolated metal atoms and reactive metal clusters, rendering them highly appealing for diverse applications, most notably in electronic devices. This perspective examines EMFs in next-generation thin-film devices, highlighting significant discoveries in device applications that incorporate EMFs. It casts a spotlight on significant advancements in device applications that integrate EMFs, with an acute focus on device performance and the crucial role of high crystallinity in achieving peak efficiency. It postulates that tailoring the size or functional groups of the fullerene cage may fulfill these needs and, in turn, transform the electrical properties of these devices. This perspective emphasizes the pressing need for more in-depth research to surmount existing limitations. The devices scrutinized in this review include organic field-effect transistors, photodetectors, organic photovoltaics, and perovskite photovoltaics. The use of EMFs in these diverse device structures is explored, concentrating on performance issues and the necessity for enhancements in select electrical and chemical properties for peak efficiency and functionality. This review serves as an exceptional resource and benchmark for fullerene researchers aiming to probe the application of EMFs in devices. 

Exploring Endohedral Metallofullerenes for Advanced Thin-Film Device Applications toward Next-Generation Electronics

Dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT) is a widely used small-molecular p-type organic semiconductor. Despite the broad availability of high-performance DNTT transistors, there is a lack of investigation into other devices based on this semiconductor. In this study, rectifying diodes with DNTT as a single transport medium are fabricated and characterized. Realizing unipolar current rectification from asymmetric metal contacts, a number of physical and electrical properties of DNTT are made accessible. Current–voltage measurement, broad-band impedance spectroscopy, drift-diffusion simulation, and equivalent-circuit modeling are combined to quantify important parameters such as dielectric constant, trap energy, and lifetime. These results provide a practical reference for the design and optimization of diverse electronic devices incorporating DNTT.

Impedance characterization of dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene diodes: Addressing dielectric properties and trap effects

In order to reduce the misoperation rate of voltage measurement on the pressure plate, the paper proposes a new method for preventing misoperation of voltage measurement on the pressure plate at the outlet of substation protection. Firstly, based on the wiring method, the measurement method for the voltage of the protection outlet pressure plate in the substation was analyzed. Secondly, the situation of misoperation in voltage measurement of the substation protection outlet pressure plate was explained. Finally, the principle of preventing voltage measurement from misoperation is set, and the process of preventing voltage misoperation of the substation protection outlet pressure plate is proposed. The test results show that the method proposed in this paper can reduce the error rate of voltage measurement while maintaining the accuracy of voltage measurement on the pressure plate. The maximum error rate of the method proposed in this paper does not exceed 1%. Therefore, it indicates that the practical application ability of this method is strong. 

Research on the Method of Preventing Misoperation in Measuring the Voltage of the Pressure Plate at the Exit of Substation Protection

Pulsed gate voltage measurement for charge mobility extraction of organic transistors

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Pulsed gate voltage measurement for charge mobility extraction of organic transistors