The excited holes occupying the valence band tail states in amorphous oxide semiconductors are found to induce formation of meta-stable O$_2^{2-}$ peroxide defects. The valence band tail states are at least partly characterized by the O-O pp{\sigma}* molecular orbital, and the localized-hole-mediated lattice instability results in the formation of the peroxide defects. Along with the O-O bond formation, the pp{\sigma}* state is heightened up into the conduction bands, and two electrons are accordingly doped in the electronic ground state. The energy barrier from the O$_2^{2-}$ peroxide state to the normal disorder state is found to be 0.97 eV in hybrid density functional theory. The hole-mediated formation of the meta-stable peroxide defects and their meta-stability is suggested as an origin of the negative bias and/or illumination stress instability in amorphous oxide semiconductors.

Instability of Amorphous Oxide Semiconductors via Carrier-Mediated Structural Transition between Disorder and Peroxide State

An increase in the demand for the next generation of “Internet‐of‐Things” (IoT) has motivated efforts to develop flexible and affordable smart electronic systems, in line with sustainable development and carbon neutrality. Cellulose holds the potential to fulfil such demands as a low‐cost green material due to its abundant and renewable nature and tunable properties. Here, a cellulose‐based ionic conductive substrate compatible with printing techniques that combines the mechanical robustness, thermal resistance and surface smoothness of cellulose nanofibrils nanopaper with the high capacitance of a regenerated cellulose hydrogel electrolyte, is reported. Fully screen‐printed electrolyte‐gated transistors and universal logic gates are demonstrated using the engineered ionic conductive nanopaper and zinc oxide nanoplates as the semiconductor layer. The devices exhibit low‐voltage operation (<3 V), and remarkable mechanical endurance under outward folding due to the combination of the robustness of the nanopaper and the compliance of the semiconductor layer provided by the ZnO nanoplates. The printed devices and the ion‐conductive nanopaper can be efficiently recycled to fabricate new devices, which is compatible with the circular economy concept.

Foldable and Recyclable Iontronic Cellulose Nanopaper for Low‐Power Paper Electronics

Solar‐blind ultraviolet (UV) photodetectors based on p‐organic/n‐Ga2O3 hybrid heterojunctions have attracted extensive attention recently. Herein, the multifunctional solar‐blind photodetector based on p‐type poly[N‐9′‐heptadecanyl‐2,7‐carbazole‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2′,1′,3′‐benzothiadiazole)] (PCDTBT)/n‐type amorphous Ga2O3 (a‐Ga2O3) is fabricated and investigated, which can work in the phototransistor mode coupling with self‐powered mode. With the introduction of PCDTBT, the dark current of such the a‐Ga2O3‐based photodetector is decreased to 0.48 pA. Meanwhile, the photoresponse parameters of the a‐Ga2O3‐based photodetector in the phototransistor mode to solar‐blind UV light are further increased, that is, responsivity (R), photo‐detectivity (D*), and external quantum efficiency (EQE) enhanced to 187 A W–1, 1.3 × 1016 Jones and 9.1 × 104 % under the weak light intensity of 11 μW cm–2, respectively. Thanks to the formation of the built‐in field in the p‐PCDTBT/n‐Ga2O3 type‐II heterojunction, the PCDTBT/Ga2O3 multifunctional photodetector shows self‐powered behavior. The responsivity of p‐PCDTBT/n‐Ga2O3 multifunctional photodetector is 57.5 mA W–1 at zero bias. Such multifunctional p‐n hybrid heterojunction‐based photodetectors set the stage for realizing high‐performance amorphous Ga2O3 heterojunction‐based photodetectors.image

Multifunctional solar‐blind ultraviolet photodetectors based on p‐PCDTBT/n‐Ga2O3 heterojunction with high photoresponse

Metal-oxide semiconductors are considered promising alternative materials in the field of flat panel display industry due to their advantages, such as high mobility, transparency, uniformity, low production cost, and large-area processability.

Enhancement of electrical stability of metal oxide thin-film transistors against various stresses

Handwritten and Sustainable Electronic Logic Circuits with Fully Printed Paper Transistors

Metal oxide semiconductors have gained much interest in the field of next generation consumer electronics due to the worldwide development of flexible electronic devices and strong demand for high-resolution, high-frame-rate displays For the practical application of metal oxide thin-film transistors on the industrial level, it is crucial to secure device stability This highlight article provides an overview on the enhanced stability of metal oxide thin-film transistors via the employment of organic materials as passivation layers Discussions on the organic materials which are categorized into four groups include the most recent accomplishments in organic passivation for metal oxide semiconductors The most up-to-date modification of the metal oxide semiconductor back channel, rationales for the employment of organic materials as a passivation layer, and discussions on the mechanism of device stability enhancement are presented Thus, this review is expected to inspire new research for future developments and applications of organic passivation layers for metal oxide semiconductors

Organic materials as a passivation layer for metal oxide semiconductors

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Organic materials as a passivation layer for metal oxide semiconductors