The modification of metal surface by ion implantation with MEVVA ion implanter and thin film deposition with filtered vacuum arc plasma device is introduced in this paper. The combination of ion implantation and thin film deposition is proved as a better method to improve properties of metal surface.

Filtered Plasma Deposition and MEVVA Ion Implantation

전이금속을 촉매로 이용하여 화학기상증착법 (CVD)으로 탄소나노튜브 (CNT)를 성장시킬 때, 질소분위기가 성장을 증진시킨다는 사실은 잘 알려져 있다. 본 논문에서는 질소분위기에 의한 CNT 성장증진의 원인이 활성화 질소이며, 활성화 질소가 성장과정 중 CNT의 탄소와 결합 함으로써 성장증진효과가 일어남을 보여주었다. 이 결과는 질소의 결합이 튜브상의 흑연판을 만드는데 필요한 탄성변형에너지를 낮추어 주는 역할을 한다는 CNx 박막의 이론적 계산결과와 일치한다. 따라서, 질소의 결합에 의한 CNT의 성장증진 효과는 튜브상의 흑연판 핵 생성과 CNT의 성장에 필요한 임계 에너지의 감소에 의한 것이다.

수직배향 cnt의 성장에 미치는 질소의 영향

Sum-frequency vibrational spectroscopy has recently been used to investigate the surface of the various polymers and was able to find the chemical compositions and structures specific to the surface. Here we report our studies on two specific polymer samples to demonstrate its capability. Polyimide thin films were made by spin coating on fused quartz and CaF₂ substrates. The sum-frequency signal originating mainly from the air/polymer interface showed markedly different spectra, indicating the structural change of the polymer surface depending on the underlying substrate. Various polyethylene surfaces were also investigated by sum-frequency vibrational spectroscopy. The surface of polyethylene samples in the CH-region showed different sum-frequency spectra, presumably due to the trace amount of additives having much higher concentration at the air/polymer interface. These examples demonstrate the surface and interface of the polymer could have different structure and chemical composition from those of a bulk, which can be studied effectively by surface nonlinear optical spectroscopy.

Polymer surfaces studied by sum - frequency vibrational spectroscopy

In this paper, we studied, by numerical calculation, a system, which was composed of metal-film and metal-substrate irradiated by IPIB with beam ion energy 250 keV, current density 10 to 250 A/㎠. While the IPIB irradiation was going on, an induced effect named mixing occurred. In this case, metal-film and part of metal-substrate melted and mixed. The mixing state was kept as it was in melting phase due to the fast cooling rate. Our works were simulating the heating and cooling process via our STEIPIB program and tried to find proper parameters for a specific filmsubstrate system, 500 ㎚ titanium film coated on aluminum, to get best mixing results. The parameters calculated for such Ti-Al system were compared with the experimental results and were in good accordance to the experimental results.

A calculation on the Metal - Film Mixing by Intense Pulse Ion Beam (IPIB)

It is experimentally shown that a film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 m depth. The -Si interface bombarded by ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the -Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

Studies of the TiO₂ - Si Interface Bombarded by Ar+ Ion Beam

Amorphous hydrous ruthenium oxide thin films have attracted much interest owing to the possibility of using this material in electrochemical supercapacitors. Recently, it was found that this material is also electrochromic: during the charging/discharging cycle, the optical transmittance of the thin film is modulated. The physical and chemical origin of this phenomenon is not fully understood yet. In this work, we performed in-situ Raman spectroscopy measurements on amorphous hydrous ruthenium oxide thin films during the charging/discharging cycles. Unambiguous changes in the Raman spectrum were observed as protons were injected or extracted from the thin film. When the samples were annealed to reduce the water content, there is a consistent trend in the Raman spectrum. The origins of the Raman features and their relation to the electrochromic and/or supercapacitor characteristics is discussed.

In - situ Raman Spectroscopy of Amorphous Hydrous RuO₂ Thin Films

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In - situ Raman Spectroscopy of Amorphous Hydrous RuO₂ Thin Films