Huiqing Sun
South China Normal University
39 Papers
80 Citations
Huiqing Sun is an academic researcher from South China Normal University. The author has contributed to research in topics: Quantum efficiency & Spontaneous emission. The author has an hindex of 7, co-authored 33 publications.
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Papers
Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer
TL;DR: In this article, the numerical investigation of electron blocking layers (EBL) structures with different Al concentration gradient changing in AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs).
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Enhancing luminescence in all-inorganic perovskite surface plasmon light-emitting diode by incorporating Au-Ag alloy nanoparticle
TL;DR: In this article, the localized surface plasmon enhanced luminescence behaviors of a radiating dipole in an all-inorganic perovskite light-emitting diode (PeLED) by incorporating a gold (Au)-silver (Ag) alloy nanoparticle (NP) in the electronic transport layer are demonstrated.
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Improvement of AlGaN-based deep ultraviolet light-emitting diodes by using a graded AlGaN superlattice hole reservoir layer
Xin Wang,Huiqing Sun,Zhiyou Guo +2 more
TL;DR: In this paper, the AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs) with a graded superlattice hole reservoir layer (HRL) can significantly enhance hole injection efficiency, compared with the traditional LED.
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Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance
Miao Zhang,Zhiyou Guo,Yong Huang,Yuan Li,Ma Jiancheng,Xia Xiaoyu,Tan Xiuyang,Fan Xia,Huiqing Sun +8 more
TL;DR: A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific onresistance (RonA).
Study of Deep Ultraviolet Light-Emitting Diodes with a p-AlInN/AlGaN Superlattice Electron-Blocking Layer
TL;DR: In this paper, the energy band diagrams, radiative recombination rate, electron leakage current, light output power and internal quantum efficiency of the AlGaN-based deep ultraviolet light-emitting diodes with a p-type Al0.92In0.08N/Al0.55Ga0.45N superlattice electron-blocking layer are studied numerically.
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