PURPOSE: A resistive random access memory device is provided to prevent sneak path problem by using a thin film structure which directly connects a bi-directional switching layer on a resistance change layer. CONSTITUTION: A first electrode(10) is formed on a thin film layer(20). The thin film layer includes a resistance change layer and a switching layer which are connected with each other. The resistance change layer includes materials with bipolar resistance switching characteristics. The switching layer includes materials with bi-directional switching characteristics. The thin film layer is formed on a second electrode(30).

Resistance random access memory

Design and preparation of triphenylamine-based polymeric materials towards emergent optoelectronic applications

High-mechanical-strength polyimide aerogels crosslinked with 4, 4′-oxydianiline-functionalized carbon nanotubes

A series of rigid nonconjugated polyimide (PI)-based thermally activated delayed fluorescence (TADF) polymers were reported for the first time, based on a "TADF-Linker-Host" strategy. Among of which, the TADF unit contains a typical TADF luminous core structure, the "Host" unit exhibits effective conjugation length that endows polyimide with high triplet energy, and the "Linker" unit has an aliphatic ring structure to improve solubility and inhibits intramolecular charge transfer effect. All the TADF polymers exhibit high thermal stability (Tg >308.7 °C) and refractive index (1.76-1.79). Remarkably, highly-efficient polymer light-emitting diodes (PLEDs) based on the polymers are successfully realized, leading to a maximal external quantum efficiency of 21.0 % along with low efficiency roll-off. Such outstanding efficiency is amongst the state-of-the-art performance of nonconjugated PLEDs, confirming the effectiveness of structural design strategy, providing helpful and valuable guidance on the development of highly-efficient fluorescent polymer materials and PLEDs.

Rigid Polyimides with Thermally Activated Delayed Fluorescence for Polymer Light‐Emitting Diodes with High External Quantum Efficiency up to 21 %

https://pubs.rsc.org/en/content/articlepdf/2021/PY/D1PY00997D

Crosslinked porous polyimides: structure, properties and applications

Inserting phenylethynyl linker into triphenylamine-based hyperbranched polyimide for effectively tuning memory performance

A series of hyperbranched polyimides (HBPIs) were synthesized by reacting a triamine monomer N,N′,N″-tris(4-methoxyphenyl)-N,N′,N″-tris(4-phenylamino)−1,3,5-benzenetriamine with various dianhydrides such as oxydiphthalic dianhydride (ODPA), 3,3′,4,4′-diphenylsulfonetetracarboxylic dianhydride (DSDA), 3,3′,4,4′-benzophenonetetracarboxylic dianhydride (BTDA), and pyromellitic dianhydride (PMDA). The hyperbranched polyimide (6FHBPI) using 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) as dianhydride monomer was also added into the discussion. All the hyperbranched polyimides exhibited excellent organo-solubility and high thermal stability. Memory devices with a sandwiched structure of indium tin oxide (ITO)/HBPI/Al were constructed by using these HBPIs as the active layers. All these HBPIs based memory devices exhibited favorable memory performances, with switching voltages between −1.3 V and −2.5 V, ON/OFF current ratios up to 107 and retention times long to 104 s. Tunable memory characteristics from electrical insulator to volatile memory, and then to nonvolatile memory were obtained by adjusting the electron acceptors of these HBPIs. Molecular simulation results suggested that the electron affinity and the dipole moment of these HBPIs were responsible for the conversion of the memory characteristics. With the electron affinity and dipole moment of these HBPIs increasing, the memory characteristics turned from volatile to nonvolatile. The present study suggested that tunable memory performance could be achieved through adjusting the acceptor moieties of the hyperbranched polyimides. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2017, 55, 2281–2288

Synthesis and memory characteristics of highly organo-soluble hyperbranched polyimides with various electron acceptors

HOMO-controlled donor-acceptor contained polyimide for nonvolatile resistive memory device

Construction of WORM-type polyimide memory materials with low threshold voltage by introducing triazole units and conjugated pendant groups

Porphyrin units are a kind of ideal electron donor units, which have large π conjugation and well-defined planar and electron-rich structures. The inserted alkynyl π bridges between porphyrin units and anhydride moieties can effectively enlarge the π-electron delocalization and molecular dimension effect and thus enhance the electron-donating ability and reduce the dipole moment in the porphyrin-based hyperbranched polyimides (HBPIs). The synergy effect of porphyrin units and alkynyl π bridges can facilitate the charge-transfer formation and dissociation, realize the transformation of memory type, and shorten the retention time of HBPI-TAPEPP-6FDA-based memory devices. The HBPI-TAPEPP-6FDA-based memory devices manifest lower threshold voltages of −2.32 and 2.42 V, a higher ON/OFF current ratio up to 10⁷, and a shorter retention time of ∼20 s.

Synergy Effect of Porphyrin Units and Alkynyl π Bridges Tunes the Memory Behavior and Threshold Voltage of Hyperbranched Polyimides

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