GaN technology is not only gaining traction in power and RF electronics but is also rapidly expanding into other application areas including digital and quantum computing electronics. This paper provides a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability. While GaN power devices have recently been commercialized in the 15–900 V classes, new GaN devices are greatly desirable to explore both higher-voltage and ultra-low-voltage power applications. Moving into the RF domain, ultra-high frequency GaN devices are being used to implement digitized power amplifier circuits, and further advances using the hardware–software co-design approach can be expected. On the horizon is the GaN CMOS technology, a key missing piece to realize the full-GaN platform with integrated digital, power, and RF electronics technologies. Although currently a challenge, high-performance p-type GaN technology will be crucial to realize high-performance GaN CMOS circuits. Due to its excellent transport characteristics and ability to generate free carriers via polarization doping, GaN is expected to be an important technology for ultra-low temperature and quantum computing electronics. Finally, given the increasing cost of hardware prototyping of new devices and circuits, the use of high-fidelity device models and data-driven modeling approaches for technology-circuit co-design are projected to be the trends of the future. In this regard, physically inspired, mathematically robust, less computationally taxing, and predictive modeling approaches are indispensable. With all these and future efforts, we envision GaN to become the next Si for electronics.

Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

Molecular dynamics study on deformation behaviour of monocrystalline GaN during nano abrasive machining

A 2-D simulation of off-state breakdown voltage (VBD) for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented in this paper. The effect of geometrical variables of FP and insulator layer on electric field distribution and VBD are investigated systematically. The FPs can modulate the potential lines and distribution of an electric field, and the insulator layer would influence the modulation effect of FPs. In addition, we designed a structure of HEMT which simultaneously contains gate FP, source FP and drain FP. It is found that the VBD of AlGaN/GaN HEMTs can be improved greatly with the corporation of gate FP, source FP and drain FP. We achieved the highest VBD in the HEMT contained with three FPs by optimizing the structural parameters including length of FPs, thickness of FPs, and insulator layer. For HEMT with three FPs, FP-S alleviates the concentration of the electric field more effectively. When the length of the source FP is 24 μm and the insulator thickness between the FP-S and the AlGaN surface is 1950 nm, corresponding to the average electric field of about 3 MV/cm at the channel, VBD reaches 2200 V. More importantly, the 2D simulation model is based on a real HMET device and will provide guidance for the design of a practical device.

Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

Temperature effect on mechanical response of c-plane monocrystalline gallium nitride in nanoindentation: A molecular dynamics study

This article presents an extensive study and demonstration of efficient electrothermal large-signal GaN HEMT modeling approaches based on combined techniques of Genetic Algorithm (GA) with Artificial Neural Networks (ANN), and Particle Swarm optimization (PSO) with Support Vector Regression (SVR). Another promising Gaussian Process Regression (GPR) based large-signal modeling approach is also explored and presented. The GA-ANN addresses the typical problem of local minima associated with the backpropagation (BP) based ANN. The GA successfully aids in the determination of optimal initial values for BP-ANN and enables it to find a unique optimal solution after subsequent of iterations with higher rate of convergence. This is also achieved using PSO-SVR with lower optimization variables. The developed modeling techniques are demonstrated and used to simulate the gate and drain currents of a 2-mm GaN device. All the models are relatively simple, practical, and easy to implement. The gate and drain currents models are embedded in an equivalent large-signal circuit’s model and built in Advanced Design System (ADS) software. The implemented model is validated by large-signal measurements and very good fitting results have been obtained. The model also showed an accurate simulation for a nonlinear power amplifier with very good computational speed and convergence.

/pdf/large-signal-modeling-of-gan-hemts-using-hybrid-ga-ann-pso-2goegtc1cx.pdf

Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

https://www.mdpi.com/2079-9292/7/12/377/pdf

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

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A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability