http://cmliris.harvard.edu/assets/science291_851.pdf

Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

https://case.edu/cse/eche/daigroup/Journal%20Articles/2011/Maschmann-2011-Length%20dependent%20foa.pdf

Length dependent foam-like mechanical response of axially indented vertically oriented carbon nanotube arrays

Laser-assisted chemical vapor deposition (LACVD) is an attractive maskless process for growing locally carbon nanotubes at selected places on substrates that may contain temperature-sensitive components. This review gives a comprehensive overview of the reported research with respect to laser assisted CVD for the growth of carbon nanotubes. The advantages and disadvantages of local growth using laser sources are discussed, with a focus on structural quality and properties, such as length, position and alignment, and process control. The paper is divided into two parts. The first part deals with the influence that the main parameters for nanotube growth—gas, catalyst and thermal energy—have on the growth of carbon nanotubes by laser-assisted synthesis. The second part deals with the attempts and successes to control different aspects of local nanotube growth using a laser-assisted growth method.

Laser-assisted growth of carbon nanotubes—A review

Horizontally aligned, dense carbon nanotubes (HADCNTs) in the form of CNT cantilevers/bridges were grown from selected trench sidewalls in silicon substrate by chemical vapor deposition (CVD) The as-grown CNT cantilevers/bridges are packed with multiwalled carbon nanotubes (MWCNTs) with a linear density of about 10 CNTs µm − 1 The excellent horizontal alignment of these CNTs is mainly ascribed to the van der Waals interactions within the dense CNT bundles What is more, the Raman intensity ratio IG/ID shows a gradual increase from the CNT roots to tips, indicating a defect gradient along CNTs generated during their growth These results will inspire further efforts to explore the fundamentals and applications of HADCNTs

https://iopscience.iop.org/article/10.1088/0957-4484/22/26/265614/pdf

Growth of horizontally aligned dense carbon nanotubes from trench sidewalls

Subsurface imaging of Au circuit structures embedded in poly(methyl methacrylate) (PMMA) thin films with a cover thickness ranging from 52 to 653 nm was carried out by using contact resonance atomic force microscopy (CR-AFM). The mechanical difference of the embedded metal layer leads to an obvious CR-AFM frequency shift and therefore its unambiguous differentiation from the polymer matrix. The contact stiffness contrast, determined from the tracked frequency images, was employed for quantitative evaluation. The influence of various parameter settings and sample properties was systematically investigated by combining experimental results with theoretical analysis from finite element simulations. The results show that imaging with a softer cantilever and a lower eigenmode will improve the subsurface contrast. The experimental results and theoretical calculations provide a guide to optimizing parameter settings for the nondestructive diagnosis of flexible circuits. Defect detection of the embedded circuit pattern was also carried out, which indicates the capability of imaging tiny subsurface structures smaller than 100 nm by using CR-AFM.

/pdf/subsurface-imaging-of-flexible-circuits-via-contact-4d45wr7tn4.pdf

Subsurface imaging of flexible circuits via contact resonance atomic force microscopy.

This work presents a novel synthesis process for locally growing carbon nanotubes on specific surface area using micro-machined heaters in a room temperature quartz tube. The temperature difference between the heating area (~600 degC) and the bulk silicon substrate (200 degC) is about 400 degC. Therefore, this process is compatible with on-chip microelectronics. The detailed micro-heater fabrication processes are presented. CNTs were synthesized using a chemical vapor deposition technique by varying the supplied power of the micro-heaters. Patterned iron film (10 nm) is used as the catalyst. We have demonstrated the capability of growing aligned carbon nanotube bundles with an average length of 75 mum and diameter of 30 mum by using this heater. The CNT growth rate was about 5 mum/min and the whole CNT synthesis can be completed within half an hour. This effective and rapid process facilitates the integration of carbon nanotubes in localized area within a larger-scale system.

A novel method of growing aligned carbon nanotubes at low temperature by using integrated micro-heater

A rapid synthesis process for local growth of the aligned carbon nanotube (CNT) bundle arrays in a quartz tube operated at room temperature is reported. The CNT bundles of 105 µm in length and 130 µm in diameter were thermally and locally synthesized on the wafer areas where the micro-heaters were integrated on the opposite side. The micro-heaters can reach a temperature of about 720 °C in the localized areas for the CNT growth while the temperature in the non-heating areas remains below 400 °C, which prevents damage to the integrated circuits (ICs) located in those areas. Furthermore, exact control of the CNT growth length is possible by varying the voltage supply time to the micro-heater since the processing wafer can be heated up and cooled down very rapidly due to its small mass. The resistivity of CNT bundles was measured to be 0.009 57 Ω cm, obtained from a nearly linear current–voltage characteristic. Hence, these locally grown CNT bundle arrays could find potential applications in three-dimensional (3D) IC wafer-level packaging.

http://iopscience.iop.org/article/10.1088/0957-4484/20/29/295303/pdf

Local synthesis of aligned carbon nanotube bundle arrays by using integrated micro-heaters for interconnect applications

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A novel method of growing aligned carbon nanotubes at low temperature by using integrated micro-heater

Local synthesis of aligned carbon nanotube bundle arrays by using integrated micro-heaters for interconnect applications