An analytic potential DG model with quantum mechanical and short channel effects is calibrated to experimental n-channel FinFET data. All C-V and I-V curves from L=10 mum to 50 nm are in excellent agreement with a single mobility model. There is evidence suggesting higher than expected currents from very short fins possibly due to strain enhanced transport effects.

Experimental Hardware Calibrated Compact Models for 50nm n-channel FinFETs

In the present era, down scaling of complementary metal-oxide-semiconductor (CMOS) technology has lead the metal-oxide-semiconductor field-effect-transistor's (MOSFET) sizes to nanometer regime which in turn experiencing difficulties due to the effect of physical and technological perspective. Double-gate (DG) MOSFET is considered as a promising device to reduce the shortcoming and shrink down towards nanometer domain. This paper proposes electrostatic potential distribution and drain current models for the lightly doped symmetrical p-channel DG MOSFET. The analytic solution of potential distribution is derived by solving the 2D Poisson's equation incorporated with hole density through the superposition method. The drain current model has been explored by incorporating physical effects like threshold-voltage roll-off, channel length modulation and surface roughness scattering. Functionality of the models has been calculated in MATLAB and the obtained results are verified and compared with state of the art literature.

/pdf/modeling-of-short-p-channel-symmetric-double-gate-mosfet-for-1if7kkiqhn.pdf

Modeling of Short P-Channel Symmetric Double-Gate MOSFET for Low Power Circuit Simulation

Study of High Performance Circuits with Symmetric Double Gate MOSFET

Nowadays, the endlessly increasing demand for faster and complex integrated circuits (IC) has been fuelled by the scaling of metal-oxide-semiconductor field-effect-transistors (MOSFET) to smaller dimensions. The continued scaling of MOSFETs approaches its physical limits due to short-channel effects (SCE). Double-gate (DG) MOSFET is one of the promising alternatives as it offers better immunity towards SCEs and can be scaled to the shortest channel length. In future, ICs can be designed using DG-CMOS technology for which mathematical models depicting the electrical characteristics of the DG MOSFETs are foremost needed. In this paper, a review on n-type symmetric DG MOSFETs models has been presented based on the analyses of electrostatic potential distribution, threshold voltage, and drain-current models. Mathematical derivations of the device models are described elaborately, and numerical simulations are also carried out to validate the replicability of models.

Revisiting Analytical Models of N-Type Symmetric Double-Gate MOSFETs

Double-Gate (DG) MOSFET is a newly emerging device that can potentially further scale down CMOS technology owing to its excellent control of short channel effects. Currently, much research effort is devoted to the development of DG MOSFETs. This dissertation focuses on the compact modeling of DG MOSFETs, aiming to extract the physics of DG MOSFETs and provide a tool for simulating DG MOSFET circuits. We start from the basic Poisson's equation and current continuity equation to rigorously derive the long-channel drain current model without the charge sheet approximation. The model is based on an analytical solution to the potential distribution at any point in the DG MOSFET. It employs one single equation to cover all the operation regions: linear, saturation, and subthreshold, continuously with no fitting parameter. Volume inversion, a non-charge-sheet phenomenon in symmetric DG MOSFETs, is accurately captured by the model. For AC and transient simulations, analytical charge and capacitance models are developed. Both symmetric and asymmetric DG MOSFET models are verified by extensive two dimensional numerical simulations. For small-geometry devices, compact models of the physical phenomena such as short channel effects are developed. In the development of the compact models, special attention is paid to ensure the model is symmetric and continuous in all the operation regions. Quantum effect is also incorporated in the long channel core model. As body doping may be needed to adjust the threshold voltage, we also studied the body doping effect on DG MOSFET and concluded that lightly doped DG MOSFETs can be modeled by adding a threshold voltage shift to the undoped DG MOSFET model. The model has been implemented into SPICE3 and Verilog-A platforms so that it can be used by circuit designers. In the implementation, Newton method is used for solving an implicit equation in the calculation of drain current. We also calibrated the model with respect to the published hardware data to affirm its consistency with the experimental I-V curves. Finally, the model has been released in public domain http ://taur.ucsd.edu/hlu for circuit simulation

/pdf/compact-modeling-of-double-gate-mosfets-3lawhasvqs.pdf

Compact modeling of Double-Gate MOSFETs

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Compact modeling of Double-Gate MOSFETs