Huang Yun

TL;DR: In this paper, a storage failure rate detecting method and a storage reliability detecting method of infrared focal plane array chip were presented, which includes measuring the number of pixels of samples of the IRP array chip; grouping the samples; measuring initial pixel effectiveness rate of each sample group before storage; determining pixel failure rate of the mentioned sample group under the high-temperature storage stress according to the final pixel effectiveness; and calculating activated energy of storage degeneration of the samples according to pixel failure rates.

TL;DR: In this paper, an STI (shallow trench isolation) oxide tapped charge extraction method and an MOS (metal oxide semiconductor) device were used to obtain a device structure model and electrical simulation was performed to obtain the surface potential on the STI sidewall edge of the MOS device.

TL;DR: In this article, a gas concentration control method and device, a storage medium, and computer equipment are provided, which consists of the following steps: respectively calculating the first and second internal-external air pressure difference theoretical values of a vacuum sealed cavity according to a preset target gas concentration, a filling gas concentration and the obtained internal external air pressure different data during the inflation of filling gas and target gas.

TL;DR: In this paper, the degradation failure modes of DC parameters such as transconductance reduction, threshold voltage shift, and gate leakage current increase were identified, and the results showed that the increase of the degradation of the die attach layer is the main reason for the increase in the junction temperature and thermal resistance of the devices.