Damascene copper electroplating for on-chip interconnections, a process that we conceived and developed in the early 1990s, makes it possible to fill submicron trenches and vias with copper without creating a void or a seam and has thus proven superior to other technologies of copper deposition. We discuss here the relationship of additives in the plating bath to superfilling, the phenomenon that results in superconformal coverage, and we present a numerical model which accounts for the experimentally observed profile evolution of the plated metal.

Damascene copper electroplating for chip interconnections

During soldering and service, intermetallic compounds (IMCs) have an important impact on the performance and reliability of electronic products. A thin and continuous intermetallic layer facilitates the formation of reliable solder joints and improves the creep and fatigue resistance of solder joints. However, if the IMCs overgrow, the coarse IMC becomes brittle and tends to crack under stress, leading to a decrease in solder joint reliability. Based on the latest developments in the field of lead-free solders at home and abroad, this paper comprehensively reviews the interfacial reaction between SnAgCu Pb-free solders and different substrates and the growth behavior of IMCs and clarifies the growth mechanism of interfacial IMCs. The effects of the modification measures of lead-free solder on the IMCs and reliability of SnAgCu/substrate interface are analyzed, which provide a theoretical basis for the development and application of new lead-free solder.

Interface reaction and intermetallic compound growth behavior of Sn-Ag-Cu lead-free solder joints on different substrates in electronic packaging

Wearable and flexible thin film thermoelectric module for multi-scale energy harvesting

The evolution of superconformal Cu electrodeposition in high aspect ratio through silicon vias (TSVs) is examined as a function of polymer suppressor concentration, applied potential and hydrodynamics. Electroanalytical measurements in a CuSO4-H2SO4-Cl electrolyte are used to explore and quantify the effect of such parameters on the metal deposition process. Hysteretic voltammetry due to suppressor breakdown reveals an S-shaped negative differential resistance that leads to non-linear spatial-temporal patterning during metal deposition. For the given hydrodynamic conditions, cyclic voltammetry reveals the potential regime over which positive-feedback gives rise to the superconformal feature filling dynamic. Breakdown of suppression is primarily related to polymer concentrations in the electrolyte while its reformation is dependent on its transport to the interface. Morphological evolution during the early stages of TSV filling reveals two distinct growth front geometries. For dilute polymer concentrations, an initial bifurcation into passive-active surfaces occurs on the side walls of the TSVs followed by bottom-up fill. The depth of the initial sidewall bifurcation within the via increases with polymer concentration. For higher polymer concentrations, i.e. ≥ 25 μmol/L, active metal deposition is rapidly confined to the bottom surface of the via followed by sustained bottom-up filling.

Superconformal Copper Deposition in Through Silicon Vias by Suppression-Breakdown.

For the common Cu-Sn interconnection system in microelectronics packaging, a significant concern is the sporadic interfacial void formation within the Cu–Sn interface and intermetallic compound (IMC) layer during the service. The existence of these voids affects the electrical and mechanical properties of the joint and thus deteriorates reliability. Most scholars simply attribute the Kirkendall voids problem to the Kirkendall effect caused by the difference in Cu/Sn inter-diffusion coefficients. However, Kirkendall voids are formed for a combination of many reasons. The plating additives, current density, surface roughness, coating thickness, and substrate types affect the formation of Kirkendall voids. We believe that among the many factors affecting the formation of voids, the unbalanced diffusion of elements (Kirkendall effect) is the root cause, and impurities and Cu microstructure are the dominant factors. The addition of alloying elements to the solder affects the formation of voids by changing the unbalanced diffusion of elements. This paper releases the possible mechanism of Kirkendall voids and gives the perspective summary from three steps of void formation, and the available suppression method is given based on the final solution. 

Forming mechanism and growth of Kirkendall voids of Sn/Cu joints for electronic packaging: A recent review

Influence of additives on electroplated copper films and their solder joints

Interfacial reactions between Cu and SnAgCu solder doped with minor Ni

Effects of Cu Electroplating Formulas on the Interfacial Microstructures of Sn/Cu Joints

Development of nanotwins in electroplated copper and its effect on shear strength of tin/copper joint

Impurity Incorporation in the Cu Electrodeposit and Its Effects on the Microstructural Evolution of the Sn/Cu Solder Joints

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