Hrvoje Buljan
Nankai University
177 Papers
1K Citations
Hrvoje Buljan is an academic researcher from Nankai University. The author has contributed to research in topics: Nonlinear system & Plasmon. The author has an hindex of 31, co-authored 153 publications. Previous affiliations of Hrvoje Buljan include Massachusetts Institute of Technology & University of Zagreb.
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Papers
Plasmonics in graphene at infrared frequencies
TL;DR: In this article, the authors show that plasmons in doped graphene simultaneously enable low-loss and significant wave localization for frequencies below that of the optical phonon branch hbar omega{;Oph};\approx 0.2 eV.
2.2K
Efficient plasmonic emission by the quantum Čerenkov effect from hot carriers in graphene
Ido Kaminer,Yaniv Tenenbaum Katan,Hrvoje Buljan,Yichen Shen,Ognjen Ilic,Josue J. Lopez,Liang Jie Wong,John D. Joannopoulos,Marin Soljacic +8 more
TL;DR: The interaction between the charge carriers flowing inside graphene and the plasmons enables a highly efficient two-dimensional Čerenkov emission, giving a versatile, tunable and ultrafast conversion mechanism from electrical signal to plasmonic excitation.
Plasmons in Graphene: Fundamental Properties and Potential Applications
Marinko Jablan,Marin Soljacic,Hrvoje Buljan +2 more
- 23 May 2013
TL;DR: A critical review of the current knowledge of graphene plasmons properties (dispersion and linewidth) with particular emphasis on plasmonic losses and the competition between different decay channels, which are not yet fully understood.
278
•Journal Article
Efficient plasmonic emission by the quantum Čerenkov effect from hot carriers in graphene
Ido Kaminer,Yaniv Tenenbaum Katan,Hrvoje Buljan,Yichen Shen,Ognjen Ilic,Josue J. Lopez,Liang Jie Wong,John D. Joannopoulos,Marin Soljacic +8 more
TL;DR: In this paper, the contract number W911NF-13-D-0001 was assigned to the U.S. Army Research Office for nanotechnologies (USARO).
230
Near-field thermal radiation transfer controlled by plasmons in graphene
TL;DR: In this article, the dependence of near-field heat exchange on doping and electron relaxation time was analyzed in the near infrared within the framework of fluctuational electrodynamics, and the dominant contribution to heat transfer can be controlled to arise from either interband or intraband processes.