The invention discloses a boron diffusion method of an N type silicon chip, a crystalline silicon solar cell and a manufacturing method of the crystalline silicon solar cell. The boron diffusion method comprises the following steps of a deposition stage: placing the silicon chip subjected to wet etching into a diffusion furnace, raising the temperature to a preset deposition temperature, and then introducing a boron source, oxygen and nitrogen for depositing the surface of the silicon chip; a diffusion promoting stage: raising the temperature of the silicon chip with the surface being deposited to a preset diffusion temperature for promoting the diffusion of boron, and introducing oxygen and nitrogen in the temperature raising and diffusion promoting processes; a post-oxidation stage: dropping the temperature of the diffused silicon chip, and introducing oxygen and nitrogen in the temperature dropping process. After the deposition diffusion process disclosed by the invention is adopted, the concentration of boron atoms on the surface of the silicon chip is reduced, the recombination rate and the lattice damage of the surface are reduced, the STDEV (standard deviation) is controlled to be about 2.0, the sheet resistance uniformity of boron diffusion is improved, the battery conversion efficiency is improved, the consumption of boron sources is also reduced, BGS (borosilicate glass) is prevented from being excessively generated, and the cost is reduced.

Boron diffusion method of N type silicon chip, crystalline silicon solar cell and manufacturing method of crystalline silicon solar cell

The invention discloses a crystalline silicon solar cell resisting to a PID effect. The crystalline silicon solar cell comprises a silicon substrate and a passive film arranged on the silicon substrate. The passive film comprises a compact layer SiO2, a loose layer SiO2, a compact layer Si3N4 and a loose layer Si3N4 all of which sequentially deposit on the front surface of the silicon substrate in a laminated mode. In addition, the invention relates to a manufacturing method of the crystalline silicon solar cell. The manufacturing method comprises the steps of texture making, diffusion, etching, oxidation, PECVD, silk-screen printing and sintering test. Double SiO2/Si3N4 films composed of an SiO2 passive film growing under the low temperature and an Si3N4 film are adopted so as to obviously improve the performance of the solar cell and enhance the passivation effect of the surface of the solar cell, wherein the Si3N4 film is formed in the PECVD mode and has the hydrogen passivation function and good antireflection effect.

Crystalline silicon solar cell resisting to PID effect and manufacturing method thereof

The invention provides a transparent film, a manufacturing method thereof, a base plate for displaying and a display device, relates to the technical field of display, and solves the problem of low transmittance of an existing transparent film The transparent film comprises at least three stacked sub layers, the refractive indexes of the stacked sub layers are different, and the refractive index of any sub layer positioned between the bottommost layer and the topmost layer is between the refractive indexes of two sub layers adjacent to the sub layer The transparent film is applicable to the field of manufacture of the display device

Transparent film, manufacturing method thereof, base plate for displaying and display device

The invention discloses a multilayer passivation anti-reflective coating of a crystalline silicon cell. The passivation anti-reflective coating is deposited on a N-type face of the crystalline silicon cell and is characterized in that the passivation anti-reflective coating sequentially comprises a silicon oxide film, a first silicon nitride film, a second silicon nitride film and a third silicon nitride film from bottom to top, wherein the thickness of the silicon oxide film is 10-30nm, and the refractive index n1 is 1.3-1.6; the thickness of the first silicon nitride film is 8-15nm, and the refractive index n2 is 2.15-2.25; the thickness of the second silicon nitride film is 15-30nm, and the refractive index n3 is 2.05-2.15; the thickness of the third silicon nitride film is 30-50nm, and the refractive index is 1.9-2.0.

Multilayer passivation anti-reflective coating of crystalline silicon cell and manufacturing method thereof

Provided is a solar cell module comprising at least a front-side transparent glass, a sealing material layer that comprises an ethylene-vinyl acetate copolymer having a vinyl acetate content of 20 to 35 wt% as a main component, a crystalline silicon solar cell element that is embedded in the sealing material, and a back-side protective layer that is formed of a resin sheet or glass, the front-side transparent glass, the sealing material layer, the crystalline silicon solar cell element, and the back-side protective layer being stacked sequentially from a light-receiving side, a layer that is formed of a transparent resin and bonded to the front-side transparent glass being formed between the front-side transparent glass and the sealing material layer This solar cell module is capable of suppressing the occurrence of PID using a sealing material formed of a general-purpose ethylene-vinyl acetate copolymer

Solar cell module and method for manufacturing same

The invention discloses a three-layered silicon nitride antireflective film of a crystalline silicon solar cell. The three-layered silicon nitride antireflective film is characterized in that the antireflective film is composed of three silicon nitride film layers, wherein the first silicon nitride film is formed on the surface of the crystalline silicon of the solar cell, and has a thickness of 8 to 12nm and a refractive index of 2.3 to 2.4; the second silicon nitride film has a thickness of 18 to 24nm and a refractive index of 2.0 to 2.1; and the third silicon nitride film has a thickness of 35 to 45nm and a refractive index of 1.9 to 2.0. The invention also provides a method for preparing the three-layered silicon nitride antireflective film of the crystalline silicon solar cell. The method comprises coating three silicon nitride films with different refractive indexes and thickness on a silicon wafer by plasma enhanced chemical vapor deposition using silane and ammonia gas as raw materials and adopting new process parameters, and the method has low requirement for equipment and is easy to realize. The film coating process can enhance the passivation effect of the film and reduce the reflectivity of the antireflective film, thereby improving conversion efficiency of the solar cell. The three-layered silicon nitride antireflective film provided by the invention can improve the photoelectric conversion efficiency by 0.2% to 0.3% in comparison with a single-layer antireflective film system.

Three-layered silicon nitride antireflective film of crystalline silicon solar cell and preparation method thereof

The invention discloses a method for efficiently passivating back side of a crystalline silicon solar cell. The method is characterized by comprising the following steps of: (1) reversely inserting etched silicon chip into a PECVD (plasma enhanced chemical vapor deposition) graphite boat, and feeding to a PECVD furnace tube; (2) vacuumizing the furnace tube; (3) pre-processing the furnace tube; (4) testing the pressure; (5) depositing a first silicon oxynitride film, wherein the temperature is 460 DEG C; the ammonia flow is 2.5-3.8slm; the silicane flow is 1100-1800sccm; the nitrous oxide flow is 500-800sccm; the radio-frequency power is 6000W, and the lasting time is 2-5min; (6) blowing by 5slm of nitrogen for 30 seconds; vacuumizing to 80mTorr, and depositing a second silicon nitride film, wherein the temperature is 465 DEG C; the ammonia flow is 5-8slm; the silicane flow is 700-950sccm; the radio-frequency power is 6000W, and the lasting time is 3min, and (7) blowing and cooling by the nitrogen. The back passivation device disclosed by the invention can be finished by arbitrarily coating an antireflective film by a production line. Therefore, extra equipment costs are not increased; reflection of the light in the internal part is increased after a smooth dielectric film is coated on the back side; loss of the light is reduced, and short-circuit current of the cell is improved.

Method for efficiently passivating back side of crystalline silicon solar cell

The invention discloses a preparation method of a back polished silicon chip. The preparation method of the back polished silicon chip is characterized by comprising the following steps: cleaning surface phosphate glass of the diffused silicon chip with mixed solution of hydrofluoric acid and nitric acid, etching the back with the mixed solution of hydrofluoric acid, nitric acid and sulphuric acid after finishing cleaning to exert a polishing effect; then cleaning porous silicon produced from the reaction with sodium hydroxide solution, neutralizing alkaline liquor with the hydrofluoric acid; finally cleaning the surface of the silicon chip with pure water, and drying with hot air. According to the back polished silicon chip fabricated by the method disclosed by the invention, the battery light absorption is improved, the battery conversion efficiency is improved, and the production cost is reduced.

Preparation method of back polished silicon chip

The invention discloses a method for preparing an antireflection film with the potential induced degradation (PID) effect resistance. The method comprises the following steps: vacuumizing a furnace tube under a pressure of 80mTorr for 4min under the condition that the inner temperature of the furnace is 420 DEG C; pretreating a silicon wafer at 420 DEG C under a pressure of 1700mTorr for 3min under the condition that the flow of nitrous oxide is 3.8-5.2slm; performing a pressure test under the condition that the inner pressure of the device is kept constant at 50mTorr for 0.2-0.5min; performing pre-depositing for 0.3-0.5 min under the conditions that the temperature is 420 DEG C, the flow of ammonia is 0.1-0.9slm, the flow of silane is 180-200sccm, the flow of nitrous oxide is 3.5-5.1slm, the pressure is 1000mTorr, and the radio-frequency power is 4300W; depositing for 3-5min under the conditions that the temperature is 450 DEG C, the flow of ammonia is 2000-2200sccm, the flow of silane is 7000-8500sccm, the flow of nitrous oxide is 2-3.4slm, the pressure is 1700mTorr, and the radio-frequency power is 4300W; and performing nitrogen purging cooling under the conditions that the temperature is 420 DEG C, the flow of nitrogen is 6-12slm, the pressure is 10000mTorr and the purging time is 5-8min. The prepared antireflection film has the PID effect resistance, thus the degradation resistance of the photovoltaic component is greatly increased.

Method for preparing antireflection film with potential induced degradation (PID) effect resistance

The invention discloses a method for preparing SiOx-SiNx laminated films of a crystal silicon solar cell. The method comprises the step of coating an antireflective film on crystalline silicon glass after the processes of cleaning, making herbs into wool, diffusing by phosphorus, etching by plasma, and removing phosphorosilicate glass. The method is characterized in that the SiOx-SiNx laminated films are deposited at two surfaces of a silicon chip by a plasma-enhanced chemical vapor deposition method. The SiOx-SiNx laminated films are deposited at the upper surface and the lower surface of the silicon chip. The SiOx-SiNx laminated films are adopted as antireflection passivating films of an emitter of the solar cell. Therefore, the defects of poor adhesive ability of the silicon chip, large structure interface stress and high interface state density when silicon nitride is directly deposited on the silicon chip are overcome, and the passivating effect is also improved.

Method for preparing SiOx-SiNx laminated films of crystal silicon solar cell

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