Hoi Sing Kwok
Hong Kong University of Science and Technology
1218 Papers
9.8K Citations
Hoi Sing Kwok is an academic researcher from Hong Kong University of Science and Technology. The author has contributed to research in topics: Liquid crystal & Thin-film transistor. The author has an hindex of 77, co-authored 1165 publications. Previous affiliations of Hoi Sing Kwok include University of Hong Kong & University of California, Berkeley.
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Papers
Tuning the electronic nature of aggregation-induced emission chromophores with enhanced electron-transporting properties
Yang Liu,Yang Liu,Shuming Chen,Jacky Wing Yip Lam,Faisal Mahtab,Hoi Sing Kwok,Ben Zhong Tang,Ben Zhong Tang +7 more
TL;DR: In this article, an oxadiazole-containing tetraphenylethene TPE-Oxa is synthesized and its optical physics and electronic properties are investigated. And the two-layer OLED devices are shown to have superior performance, i.e., lower turn-on voltage, higher brightness and efficiencies, to the devices of typical configuration with a dedicated electron-transporting layer.
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Electrically controlled birefringence colours in deformed helix ferroelectric liquid crystals
TL;DR: In this article, a short helix pitch (p 0.45 µm) ferroelectric liquid crystal (FLC) mixture was found to provide four electrically switched birefringence colours: blue, green, yellow and red.
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Patent
Polycrystalline silicon thin film transistors with bridged-grain structures
Hoi Sing Kwok,Man Wong,Zhiguo Meng,Shuyun Zhao +3 more
- 04 Feb 2008
TL;DR: In this paper, the bridged-grain structure (BG) is used to separate the intrinsic or lightly doped channel into multiple regions, and a single gate covering the entire active channel including the doped lines is still used to control the current flow.
Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering
TL;DR: Continuous and large-area molybdenum disulfide (MoS2) growth on a SiO2/Si substrate by radio frequency magnetron sputtering (RFMS) combined with sulfurization is reported and high quality few-layered MoS2 on a large- area can be achieved by controlling the radio-frequency magnetrons sputtering power.
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