抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

This article provides a comprehensive review of current research activities that concentrate on one-dimensional (1D) nanostructures—wires, rods, belts, and tubes—whose lateral dimensions fall anywhere in the range of 1 to 100 nm. We devote the most attention to 1D nanostructures that have been synthesized in relatively copious quantities using chemical methods. We begin this article with an overview of synthetic strategies that have been exploited to achieve 1D growth. We then elaborate on these approaches in the following four sections: i) anisotropic growth dictated by the crystallographic structure of a solid material; ii) anisotropic growth confined and directed by various templates; iii) anisotropic growth kinetically controlled by supersaturation or through the use of an appropriate capping reagent; and iv) new concepts not yet fully demonstrated, but with long-term potential in generating 1D nanostructures. Following is a discussion of techniques for generating various types of important heterostructured nanowires. By the end of this article, we highlight a range of unique properties (e.g., thermal, mechanical, electronic, optoelectronic, optical, nonlinear optical, and field emission) associated with different types of 1D nanostructures. We also briefly discuss a number of methods potentially useful for assembling 1D nanostructures into functional devices based on crossbar junctions, and complex architectures such as 2D and 3D periodic lattices. We conclude this review with personal perspectives on the directions towards which future research on this new class of nanostructured materials might be directed.

One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications

/pdf/self-assembled-monolayers-of-thiolates-on-metals-as-a-form-1neb0hj3k4.pdf

Self-assembled monolayers of thiolates on metals as a form of nanotechnology.

This paper describes a procedure that makes it possible to design and fabricate (including sealing) microfluidic systems in an elastomeric materialpoly(dimethylsiloxane) (PDMS)in less than 24 h. A network of microfluidic channels (with width >20 μm) is designed in a CAD program. This design is converted into a transparency by a high-resolution printer; this transparency is used as a mask in photolithography to create a master in positive relief photoresist. PDMS cast against the master yields a polymeric replica containing a network of channels. The surface of this replica, and that of a flat slab of PDMS, are oxidized in an oxygen plasma. These oxidized surfaces seal tightly and irreversibly when brought into conformal contact. Oxidized PDMS also seals irreversibly to other materials used in microfluidic systems, such as glass, silicon, silicon oxide, and oxidized polystyrene; a number of substrates for devices are, therefore, practical options. Oxidation of the PDMS has the additional advantage that it ...

Rapid prototyping of microfluidic systems in poly(dimethylsiloxane)

Graphene’s success has shown that it is possible to create stable, single and few-atom-thick layers of van der Waals materials, and also that these materials can exhibit fascinating and technologically useful properties. Here we review the state-of-the-art of 2D materials beyond graphene. Initially, we will outline the different chemical classes of 2D materials and discuss the various strategies to prepare single-layer, few-layer, and multilayer assembly materials in solution, on substrates, and on the wafer scale. Additionally, we present an experimental guide for identifying and characterizing single-layer-thick materials, as well as outlining emerging techniques that yield both local and global information. We describe the differences that occur in the electronic structure between the bulk and the single layer and discuss various methods of tuning their electronic properties by manipulating the surface. Finally, we highlight the properties and advantages of single-, few-, and many-layer 2D materials in...

/pdf/progress-challenges-and-opportunities-in-two-dimensional-1sweg4hljr.pdf

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

Tunnel diodes are of interest to gain insights into the limitations of tunnel field effect transistors (TFETs) as they enable us to distinguish effects of the heterojunction from device parasitics found in a three terminal device. In the present work, we report on InAs/GaSb nanowire heterojunction tunnel diodes monolithically integrated on silicon-on-insulator substrate (SOI). The nanowires were grown using template-assisted selective epitaxy (TASE). Temperature dependent I–V measurements show a change in the conductance slope due to the presence of defects at the heterojunction. Comparison with TFETs results shows a similar temperature dependence of the slope, but with smaller absolute values. We further performed room temperature pulsed I–V measurements on the same diodes to analyze trap contributions and we observed no significant dependence on pulse time down to 10µs.

Investigation of InAs/GaSb tunnel diodes on SOI

Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template

A method for printing a binary hologram on a manufactured product comprises the provision of a stamp with a pattern corresponding to the hologram (30). The product is initially coated with a metal layer. The stamp is inked with a masking solution (40) and pressed against the manufactured product (50). Then, the hologram print is obtained by selective etching of parts of the metal layer which are not masked (60). The method is adapted for printing holograms on optical lenses.

Method for printing a binary hologram on a manufactured product, and optical lens with a binary hologram printed thereon

Vertical impact ionization of single surround-gated silicon nanowire field-effect transistor (NW FET) have been demonstrated that allow for very steep sub-threshold swings, low operating voltages and low leakage current. As a result the standby power of highly integrated circuits dramatically decreases.

Impact ionization FETs based on silicon nanowires

In this work, we demonstrate the growth of vertically oriented GaAs nanowires (NWs) and microplatelets directly on a patterned SiO2/Si(111) substrate by hydride vapor-phase epitaxy (HVPE). Direct condensation of GaAs on Si was achieved through a critical surface preparation under an As-controlled atmosphere. GaAs NWs were grown along the ⟨111⟩B direction with a hexagonal cross section when the hole opening diameter (D) in the SiO2 mask was below 350 nm. Larger apertures (D ≥ 500 nm) resulted in uniform microplatelets. This study highlights the capability of HVPE for selective area growth of GaAs directly on Si and thus the potential of HVPE as a generic heterointegration process for III–V semiconductors on silicon. 

Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy

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