Using first-principles calculations, we investigate the origin of near-infrared plasmonic activity in Al:ZnO transparent conducting oxides. Our results predict realistic values for the plasma frequency and the free electron density as a function of the Al doping and in agreement with recent experimental results. We also provide a microscopic insight on the formation of surface-plasmon polaritons at the Al:ZnO/ZnO interfaces in terms of characteristic lengths that can be measured by experiments. The direct comparison with standard plasmonic metals underlines the promising capabilities of transparent conducting oxides as compact and low-loss plasmonic materials for optoelectronic applications and telecommunications.

Transparent Conductive Oxides as Near-IR Plasmonic Materials: The Case of Al-Doped ZnO Derivatives

More than 170-fold ultraviolet emission enhancement was obtained from the hexagonal ZnO microrods synthesized by a simple vapor-phase transport process and decorated by Al nanoparticles (NPs). Based on the stable and transient photoluminescence (PL) spectra of the ZnO microrods sputtered with Al NPs for different times, the underlying mechanism was deduced and can be attributed to the metal surface plasmon resonance (SPR) coupling with ZnO. Interestingly, with increasing of the sputtering time, the ratio of the band gap emission to the defect-related emission was increased from 0.1 to 42.7. Our results demonstrated that ZnO microrods decorated with Al NPs shed light on developing stable and high-efficiency excitonic optoelectronic devices such as light-emitting diodes and lasers.

Direct resonant coupling of Al surface plasmon for ultraviolet photoluminescence enhancement of ZnO microrods.

Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers.

/pdf/plasmon-enhanced-electrically-light-emitting-from-zno-3z4y8c611j.pdf

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices.

Interface Engineering in 1D ZnO-Based Heterostructures for Photoelectrical Devices

p-GaN/i-Al2O3/n-ZnO (PIN) heterojunction LEDs with different dielectric Al2O3 thicknesses were fabricated via an atomic layer deposition technique. By optimizing the i-Al2O3 layer thickness to be ∼12 nm, the effective electron accumulation and hole injection are simultaneously achieved in the n-ZnO active layer, resulting in a greatly improved near-UV electroluminescence intensity of this PIN type LED. Moreover, by introducing Ag nanowires, whose surface plasmon (SP) resonant energy is closer to the ZnO UV emission energy, into the LED structure, the electroluminescence intensity was further increased ∼2.8 times. Time-resolved and temperature-dependent spectroscopy analyses reveal that both the spontaneous radiation rate and internal quantum efficiency of the ZnO active layer are increased as a result of resonant couplings between ZnO excitons and Ag nanowire SPs, which gives rise to the observed near-UV electroluminescence enhancement.

Enhanced near-UV electroluminescence from p-GaN/i-Al2O3/n-ZnO heterojunction LEDs by optimizing the insulator thickness and introducing surface plasmons of Ag nanowires

Ag nanoparticle surface plasmon enhanced ZnO homojunction light-emitting devices (LEDs) have been constructed. It is found that the Ag nanoparticles can increase the emission of the devices greatly, and the Ag nanoparticle decorated LEDs degrade little after placing in ambient air for three months, revealing their good stability.

Stable surface plasmon enhanced ZnO homojunction light-emitting devices

The invention provides an atomic layer deposition apparatus employing a uniform air intake system, and relates to atomic layer deposition apparatuses The objective of the invention is to solve the problem of low deposition efficiency in the prior art caused by poor uniformity of contact between a precursor and a substrate or an upper atomic layer, a low utilization rate of reactants and a long growth period of materials The apparatus comprises a reaction chamber, a first precursor container, a second precursor container, an auxiliary sweeping gas container, a first gas supply pipeline, a second gas supply pipeline, an auxiliary sweeping gas supply pipeline, a uniform air intake system, a chamber cover, etc, wherein, the first gas supply pipeline, the second gas supply pipeline and the auxiliary sweeping gas supply pipeline are respectively connected with the first precursor container, the second precursor container and the auxiliary sweeping gas container, the first gas supply pipeline and the second gas supply pipeline respectively communicate with the uniform air intake system in the reaction chamber through the chamber cover of the reaction chamber, and the uniform air intake system is fixed at the lower part of the chamber cover The apparatus meets scientific research and production needs

Atomic layer deposition apparatus employing uniform air intake system

The invention discloses a method for preparing a p-type zinc oxide (ZnO) based thin film in a lithium-nitrogen (Li-N) double-acceptor co-doping mode, belongs to the field of preparation of semiconductor thin films, and aims to overcome the technical defects of low repeatability of the conventional method for preparing the p-type ZnO-based thin film, poor effectiveness of the prepared p-type ZnO-based thin film and difficulty in flexible adjustment of the doping amount of doped elements. The method comprises the step of preparing the Li-N double-acceptor co-doped p-type ZnO-based thin film by using a ZnO thin film having a single-crystal structure as a platform, using ionized N and oxygen (O) plasmas as an N doped source and an O source, using high-pure metal Li as a Li doped source, using high-pure metal Zn as a Zn source, and using high-pure II-group metal as growth sources corresponding to required elements. Compared with the conventional method for preparing the p-type ZnO-based thin film, the method provided by the invention has the advantages that: 1, the repeatability is high; 2, the doping amount is adjustable; and 3, the prepared p-type ZnO-based thin film can be applied to photoelectric devices.

Method for preparing p-type zinc oxide (ZnO) based thin film in lithium-nitrogen (Li-N) double-acceptor co-doping mode

Au/MgO/ZnO/MgO/Au structures have been designed and constructed in this study. Under a bias voltage, a carrier avalanche multiplication will occur via an impact ionization process in the MgO layer. The generated holes will be drifted into the ZnO layer, and recombine radiatively with the electrons in the ZnO layer. Thus obvious emissions at around 387 nm coming from the near-band-edge emission of ZnO will be observed. The reported results demonstrate the ultraviolet (UV) emission realized via a carrier multiplication process, and so may provide an alternative route to efficient UV emissions by bypassing the challenging p-type doping issue of ZnO.

http://iopscience.iop.org/article/10.1088/1674-1056/22/7/077307/pdf

Ultraviolet emissions realized in ZnO via an avalanche multiplication process

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

He Shen

Author Tools

Chat about Author

Papers

Stable surface plasmon enhanced ZnO homojunction light-emitting devices

Atomic layer deposition apparatus employing uniform air intake system

Method for preparing p-type zinc oxide (ZnO) based thin film in lithium-nitrogen (Li-N) double-acceptor co-doping mode

Ultraviolet emissions realized in ZnO via an avalanche multiplication process