Harianto Wong
Chartered Semiconductor Manufacturing
5 Papers
119 Citations
Harianto Wong is an academic researcher from Chartered Semiconductor Manufacturing. The author has contributed to research in topics: Leakage (electronics) & Salicide. The author has an hindex of 2, co-authored 5 publications.
Chat about Author
Papers
Patent
Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance
Harianto Wong,Kin Leong Pey,Lap Chan +2 more
- 22 Jan 1997
TL;DR: In this paper, a method for making low sheet resistance sub-quarter-micrometer gate electrode lengths on field effect transistors has been achieved, which involves patterning gate electrodes on a silicon substrate from a conductively doped polysilicon layer having a silicon nitride layer on the surface.
113
Void formation in titanium desilicide/p+ silicon interface: impact on junction leakage and silicide sheet resistance
TL;DR: In this paper, the authors observed the formation of voids at the interface of TiSi 2 /p + -Si after the titanium-salicidation process in a deep-sub-micron CMOS technology.
3
Thermal Studies on Stress-Induced Void-Like Defects in Epitaxial-CoSi2 Formation
C. S. Ho,Kin Leong Pey,C. H. Tung,K. C. Tee,K. Prasad,D. Saigal,Jackie J. L. Tan,Harianto Wong,Kong Hean Lee,Thomas Osipowicz,Soo Jin Chua,R. P. G. Karunasiri +11 more
TL;DR: In this article, the first rapid thermal process (RTP) in a typical SALICIDE process was studied by varying the temperature and the RTP ramp-up rate, and it was found that higher temperature anneals also resulted in a corresponding increase in void size.
2
Impact of nitrogen ion-implantation on deep submicron SALICIDE process
Chong Wee Lim,Syamal K. Lahiri,C.H. Tung,Sang Min Wong,Kong Hean Lee,Harianto Wong,Kin Leong Pey,Lap Chan +7 more
- 27 Aug 1997
TL;DR: In this paper, the effect of N ion-implantation on silicidation reaction has been investigated and the impact of incorporating N implantation into the conventional self-aligned TiSi2 sub-micron CMOS devices is presented.
1
Integration of SALICIDE process for deep-submicron CMOS technology : effect of nitrogen/argon-amorphized implant on SALICIDE formation
TL;DR: In this paper, the authors present a Ti-SALICIDE (self aligned silicide) process incorporating an argon or nitrogen-amorphization implantation prior to silicidation to enhance the C54-TiSi 2 formation for deep submicron CMOS devices.
1