This paper studies the relation between photoexcitation of a single-walled carbon nanotube (SWNT) based device, and its THz output power in the context of THz photoconductive (PC) switching and THz photomixing A detailed approach of calculating output THz power for such a device describes the effect of each parameter on the performance of the THz PC switch and highlights the design dependent achievable limits A numerical assessment, with typical values for each parameter, shows that–subject to thermal stability of the device–SWNT based PC switch can improve the output power by almost two orders of magnitudes compared to conventional materials such as LT-GaAs

Single-walled carbon nanotubes as base material for THz photoconductive switching: a theoretical study from input power to output THz emission.

We present a theoretical model of laser heating carbon nanotubes to determine the temperature profile during laser irradiation. Laser heating carbon nanotubes is an essential physics phenomenon in many aspects such as materials science, pharmacy, and medicine. In the present article, we explain the applications of carbon nanotubes for photoacoustic imaging contrast agents and photothermal therapy heating agents by evaluating the heat propagation in the carbon nanotube and its surrounding. Our model is constructed by applying the classical heat conduction equation. To simplify the problem, we assume the carbon nanotube is a solid cylinder with the length of the tube much larger than its diameter. The laser spot is also much larger than the dimension of carbon nanotubes. Consequently, we can neglect the length of tube dependence. Theoretically, we show that the temperature during laser heating is proportional to the diameter of carbon nanotube. Based on the solution of our model, we suggest using the larger diameter of carbon nanotubes to maximize the laser heating process. These results extend our understanding of the laser heating carbon nanotubes and provide the foundation for future technologically applying laser heating carbon nanotubes.

A Theoretical Model of Laser Heating Carbon Nanotubes.

Carbon nanotubes possess appealing properties for terahertz (THz) applications. This work investigates the contribution of these properties in the context of THz photoconductive (PC) switches as THz detectors. The analysis engages the received THz electric field, the optical excitation, and the photocarrier dynamics of the carbon nanotube material through Drude-Smith theory and equivalent circuit model. Through this analysis, the effect of each parameter in the detected current can be investigated. Based on a realistic numerical assessment and comparison with our measurements for a conventional LT-GaAs PC switch, it is found that improvement in detected current is theoretically achievable, depending on the relative value of the imaginary photoconductivity of the CNT film. This is a parameter that can be varied through chemical treatment of the film. We found that, unlike the case of PC switches as THz emitting devices where a higher mobility is desired for higher output THz power, the detected current in the THz receiving PC switch is a nonmonotonic function of the mobility in the single-wall carbon nanotubes (SWNT) film. The capabilities and limitations revealed in this study set guidelines for fabrication and optimization of more efficient carbon nanotube-based THz receiving PC switches. The study also addresses the fabrication process and challenges.

Carbon Nanotube-Based Photoconductive Switches for THz Detection: An Assessment of Capabilities and Limitations

In this work, a directed assembly technique for controlled micro-patterning of Single-Walled Carbon Nanotubes (SWNTs) on to a flexible Parylene-C substrate has been demonstrated. A simple site-selective fluidic assembly of SWNTs has been utilized to directly assemble SWNTs on a plasma treated parylene-C substrate to form ordered high density carbon nanotube networks. Continuous nanotube micro-arrays and networks as small as 4µm wide and lengths as long as 1500µm have been fabricated. After fabrication, the parylene substrate containing the SWNT networks was peeled off from the Polycarbonate substrate. We next performed both electrical and mechanical tests to further characterize the flexible SWNT networks. The measured resistance of patterned SWNT networks was around 300Ω utilizing Au electrode pads. The test sample handled multiple bending cycles (tested up to 5 times) without showing any signs of hysteresis. High density patterning of carbon nanotube networks on flexible Parylene-C substrates has potential applications including wearable electronics and sensors, flexible field effect transistors (FETs) and interconnects.

Patterning high density SWNT networks on flexible Parylene-C substrate

Purpose – Wearable electronics is an emerging technology predicted to become a 50B$ industry by 2018. Components and circuits will be highly integrated into clothing and other apparel. One crucial factor is the need for highly robust, flexible printed circuit tracks with sufficiently high electrical conductivity. The fact that metal-based tracks tend to suffer from fatigue failure has driven the development of alternative materials. The paper aims to discuss these issues. Design/methodology/approach – Alternative materials are organic conductors and carbon nanotubes. The latter has a great flexibility and intrinsic strength. While nanotubes can be solubilised and printed using ink-jet techniques, this usually requires polymer additives. The paper has therefore sought to develop a novel solvent-free dry-ink. Findings – The paper has found that it is possible to directly transfer from a nanotube growth substrate, via a hard print stamp head, onto a flexible rubber substrate and that one loading of the stamp...

Multi-shot printing of conductive tracks using a dry carbon nanotube ink

The different properties Carbon Nanotube (CNT) can be used for various applications. This technologically important material can be loaded into waveguides, by spray coating purified CNT or spin coated CNT – polymer composites, thus allowing the investigation of optical properties such as linear and non linear absorption characteristics, refractive index variation and the characteristics when conjugated with polymer composites. In this paper the absorption characteristics of Carbon Nanotube is determined using SWCNT samples with varying thickness. The absorption coefficient of carbon nanotube is determined to be equal to ~24 x 10 4 cm -1 . The implications of such strong absorption value are discussed.

/pdf/absorption-characteristics-of-single-wall-carbon-nanotubes-29b7ctw8fh.pdf

Absorption characteristics of single wall carbon nanotubes

This paper reports for the first time PECVD and CVD growth of Multiwalled Carbon Nanotubes (MWNTs) both aligned and non aligned on high temperature, partially depleted CMOS SOI substrates. We also report for the first time the growth of Carbon Nanotubes on SOI ultra-thin membranes with the use of different catalysts (Fe, Ni) and optimized for vertically aligned and non aligned growth. The SOI substrates, featuring CMOS devices and circuits, were subsequently tested to check the electrical performance after the high temperature growth. These particular wafers also contained some advanced high power devices and their functionality has been found to be virtually unchanged after CNT growth which proves that the CNT growth is fully compatible with CMOS SOI and the membrane technologies.

/pdf/cmos-compatibility-of-carbon-nanotubes-on-soi-devices-3aurfectqb.pdf

CMOS compatibility of carbon nanotubes on SOI devices

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Absorption characteristics of single wall carbon nanotubes

CMOS compatibility of carbon nanotubes on SOI devices