Abstract Despite remarkable progress in the development of halide perovskite materials and devices, their integration into nanoscale optoelectronics has been hindered by a lack of control over nanoscale patterning. Owing to their tendency to degrade rapidly, perovskites suffer from chemical incompatibility with conventional lithographic processes. Here, we present an alternative, bottom-up approach for precise and scalable formation of perovskite nanocrystal arrays with deterministic control over size, number, and position. In our approach, localized growth and positioning is guided using topographical templates of controlled surface wettability through which nanoscale forces are engineered to achieve sub-lithographic resolutions. With this technique, we demonstrate deterministic arrays of CsPbBr 3 nanocrystals with tunable dimensions down to &lt;50 nm and positional accuracy &lt;50 nm. Versatile, scalable, and compatible with device integration processes, we then use our technique to demonstrate arrays of nanoscale light-emitting diodes, highlighting the new opportunities that this platform offers for perovskites’ integration into on-chip nanodevices. 

/pdf/on-site-growth-of-perovskite-nanocrystal-arrays-for-t5v5i1ln.pdf

On-site growth of perovskite nanocrystal arrays for integrated nanodevices

Black phosphorus gives several advantages and complementarities over other two-dimensional materials. It has drawn extensive interest owing to its relatively high carrier mobility, wide tunable bandgap, and in-plane anisotropy in recent years. This manuscript briefly reviews the structure and physical properties of black phosphorus and targets on black phosphorus for photonic integrated circuits. Some of the applications are discussed including photodetection, optical modulation, light emission, and polarization conversion. Corresponding recent progresses, associated challenges, and future potentials are covered. 

Black Phosphorus for Photonic Integrated Circuits

Abstract Silicon photonic integrated circuit foundries enable wafer-level fabrication of entire electro-optic systems-on-a-chip for applications ranging from datacommunication to lidar to chemical sensing. However, silicon’s indirect bandgap has so far prevented its use as an on-chip optical source for these systems. Here, we describe a fullyintegrated broadband silicon waveguide light source fabricated in a state-of-the-art 300-mm foundry. A reverse-biased p-i-n diode in a silicon waveguide emits broadband near-infrared optical radiation directly into the waveguide mode, resulting in nanowatts of guided optical power from a few milliamps of electrical current. We develop a one-dimensional Planck radiation model for intraband emission from hot carriers to theoretically describe the emission. The brightness of this radiation is demonstrated by using it for broadband characterization of photonic components including Mach-Zehnder interferometers and lattice filters, and for waveguide infrared absorption spectroscopy of liquid-phase analytes. This broadband silicon-based source can be directly integrated with waveguides and photodetectors with no change to existing foundry processes and is expected to find immediate application in optical systems-on-a-chip for metrology, spectroscopy, and sensing. 

pdf/broadband-near-infrared-emission-in-silicon-waveguides-4lgnwtj4c4.pdf

Broadband near-infrared emission in silicon waveguides

The integration of microelectronic and photonic circuits on a single silicon chip for high-speed and low-power optoelectronic technology

Light detection and ranging (LIDAR) is a widely used technique for measuring distance. With recent advancements in integrated photonics, there is a growing interest in miniaturizing LIDAR systems through on-chip photonic devices, but a LIDAR light source compatible with current integrated circuit technology remains elusive. In this letter, we report a pulsed CMOS LED based on native Si, which spectrally overlaps with Si detectors' responsivity and can produce optical pulses as short as 1.6 ns. A LIDAR prototype is built by incorporating this LED and a Si single-photon avalanche diode (SPAD). By utilizing time-correlated single-photon counting (TCSPC) to measure the time-of-flight (ToF) of reflected optical pulses, our LIDAR successfully estimated the distance of targets located approximately 30 cm away with sub-centimeter resolution, approaching the Cramér-Rao lower bound set by the pulse width and instrument jitter. Additionally, our LIDAR is capable of generating depth images of natural targets. This all-Si LIDAR demonstrates the feasibility of integrated distance sensors on a single photonic chip.

Nanosecond pulsed CMOS LED for all-silicon time-of-flight ranging.

A nanoscale on-chip light source with high intensity is desired for various applications in integrated photonics systems. However, it is challenging to realize such an emitter using materials and fabrication processes compatible with the standard integrated circuit technology. In this letter, we report an electrically driven Si light-emitting diode with sub-wavelength emission area fabricated in an open-foundry microelectronics complementary metal-oxide-semiconductor platform. The light-emitting diode emission spectrum is centered around 1100 nm and the emission area is smaller than 0.14 μm2 (~[Formula: see text] nm). This light-emitting diode has high spatial intensity of >50 mW/cm2 which is comparable with state-of-the-art Si-based emitters with much larger emission areas. Due to sub-wavelength confinement, the emission exhibits a high degree of spatial coherence, which is demonstrated by incorporating the light-emitting diode into a compact lensless in-line holographic microscope. This centimeter-scale, all-silicon microscope utilizes a single emitter to simultaneously illuminate ~9.5 million pixels of a complementary metal-oxide-semiconductor imager. 

https://www.nature.com/articles/s41467-023-36639-1.pdf

A sub-wavelength Si LED integrated in a CMOS platform

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A sub-wavelength Si LED integrated in a CMOS platform