
 We fabricated enhancement-mode p-GaN gate GaN HEMT with multiple field plates (MFPs) and analyzed the reliability of devices by means of simulation and experiment in this paper. The simulation of electric-field distribution indicates that the MFPs effectively weaken the electric field peak near gate to below theoretical breakdown value and smooth the electric field between the gate edge and drain-side field plate edge. The simulated electric field peak leading to the breakdown of device with MFPs at high drain voltage is located on drain edge, which is validated by experimental results. The GaN HEMTs with MFPs exhibit excellent long-term reliability under high temperature and high drain voltage, while deviations of threshold voltage and on-resistance were observed in the device subjected to drain stress. We attribute the deviations to electron accumulation and high field-assisted detrapping process in the p-GaN layer. This investigation will provide some new insight into understanding the mechanism of variations in threshold voltage and on-resistance under off-state drain stress.

Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates

In this study, a normally-on AlGaN/GaN metal–insulator-semiconductor high electron mobility transistor (MIS-HEMT) and a normally-off AlGaN/GaN metal–insulator-semiconductor field-effect transistor (MIS-FET) with recessed MIS gate are fabricated by dual-channel epitaxy structure. The recessed region is cleaned by dipping it into diluted buffered oxide etch (BOE), HCl, and tetramethylammonium hydroxide (TMAH) solutions. After cleaning, a 20 nm Al2O3 is deposited by atomic layer deposition (ALD). Then, the post-deposition annealing is executed. Non-recessed MIS-HEMT demonstrates a threshold voltage of −9.81 V, a high drain current of 660.76 mA mm−1, and a small on-resistance of 6.47 Ω mm. Recessed gate MIS-FET shows a positive threshold voltage of 1.46 V with a drain current of 144.81 mA mm−1. In addition, the devices present a high gate breakdown voltage of 26.5 V by non-recessed MIS-HEMT and 18.5 V by recessed MIS-FET. Both devices show a low I–V hysteresis under double sweep I D–V GS measurement.

Recessed-gate AlGaN/GaN MIS-FETs with dual 2DEG channels

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Recessed-gate AlGaN/GaN MIS-FETs with dual 2DEG channels