A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

A Schottky UV photodetector based on graphene/ZnO:Al nanorod-array-film (AZNF) structure has been fabricated. Different from the previously reported graphene/ZnO photodetectors, this photodetector has a stable Schottky barrier which does not disappear under UV light. Thus, the UV photodetector can work as a high-performance self-powered device. The key to improve the stability of the Schottky barrier is a two-step surface treatment process. As a result, the self-powered photodetector exhibits a UV-to-visible rejection ratio of about 1 × 102, a responsivity of 0.039 A W1–, a short rise time of 37 μs, and a decay time of 330 μs. Furthermore, the photodetector is able to keep the responsivity under low light conditions. In comparison with the previously reported graphene/ZnO UV photodetectors, the photodetector exhibits a higher responsivity at zero bias and a faster response speed. This study provides a potential way to fabricate high-performance self-powered UV photodetectors.

Fabrication of Self-Powered Fast-Response Ultraviolet Photodetectors Based on Graphene/ZnO:Al Nanorod-Array-Film Structure with Stable Schottky Barrier

Polymer nanocomposites with aligned two-dimensional materials

Fabrication of flexible optoelectronic devices based on MoS2/graphene hybrid patterns by a soft lithographic patterning method

The realization that nanostructured graphene featuring nanoscale width can confine electrons to open its bandgap has aroused scientists' attention to the regulation of graphene structures, where the concept of graphene patterns emerged. Exploring various effective methods for creating graphene patterns has led to the birth of a new field termed graphene patterning, which has evolved into the most vigorous and intriguing branch of graphene research during the past decade. The efforts in this field have resulted in the development of numerous strategies to structure graphene, affording a variety of graphene patterns with tailored shapes and sizes. The established patterning approaches combined with graphene chemistry yields a novel chemical patterning route via molecular engineering, which opens up a new era in graphene research. In this review, the currently developed graphene patterning strategies is systematically outlined, with emphasis on the chemical patterning. In addition to introducing the basic concepts and the important progress of traditional methods, which are generally categorized into top-down, bottom-up technologies, an exhaustive review of established protocols for emerging chemical patterning is presented. At the end, an outlook for future development and challenges is proposed.

Evolution of Graphene Patterning: From Dimension Regulation to Molecular Engineering

A simple and efficient soft lithographic process for an easily applicable patterning method for large-scale graphene sheets was demonstrated. The surface of an elastomeric stamp was functionalized with polar molecules to enhance the interfacial adhesive force between the stamp and the graphene layer. A specific graphene area was then patterned on the initial substrate and transferred to the target surface by contacting with the stamp.

/pdf/soft-lithography-of-graphene-sheets-via-surface-energy-bzszejg5jv.pdf

Soft lithography of graphene sheets via surface energy modification

Unlike conventional dry stamp-based printing methodologies, the suggested wet PDMS stamping technique allows for the generation of well-patterned graphene source/drain electrode structures. It is clarified that the electrical characteristics of soluble In–Ga–Zn–O (IGZO) TFTs can be improved effectively by adjusting the work function of transfer-printed graphene electrodes with a simple, facile Au doping technique. By implementing the transfer-printed, Au-doped graphene layers as a source/drain electrode and the newly developed chemical structure-tailored IGZO semiconductors as a soluble channel layer, the high performance graphene/IGZO TFTs are demonstrated with a field-effect mobility of 3.2 cm2 V−1 s−1, which is far superior to the previously reported TFTs employing the printable electrode and a soluble oxide semiconductor.

Graphene electrodes transfer-printed with a surface energy-mediated wet PDMS stamp: impact of Au doped-graphene for high performance soluble oxide thin-film transistors

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Soft lithography of graphene sheets via surface energy modification

Graphene electrodes transfer-printed with a surface energy-mediated wet PDMS stamp: impact of Au doped-graphene for high performance soluble oxide thin-film transistors