There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.

Carbon-based electronics.

We study a class of photonic crystals in which both the dielectric constant e d the magnetic permeability m vary within the crystal. We find that in the case where both e andm have their maximum values in the same material, the photonic band gaps tend to disappear. However, in the opposite case where e andm have their maximum values in different materials, the gaps become wider with maximum gap over midgap frequency as high as 0.8. We also discuss the possibility of designing such photonic crystals with ferrites. @S0163-1829 ~97!06227-9# BRIEF REPORTS

Physical Review B

A topical review of numerical and experimental studies of supercontinuum generation in photonic crystal fiber is presented over the full range of experimentally reported parameters, from the femtosecond to the continuous-wave regime. Results from numerical simulations are used to discuss the temporal and spectral characteristics of the supercontinuum, and to interpret the physics of the underlying spectral broadening processes. Particular attention is given to the case of supercontinuum generation seeded by femtosecond pulses in the anomalous group velocity dispersion regime of photonic crystal fiber, where the processes of soliton fission, stimulated Raman scattering, and dispersive wave generation are reviewed in detail. The corresponding intensity and phase stability properties of the supercontinuum spectra generated under different conditions are also discussed.

Supercontinuum generation, photonic crystal fiber

A hybrid simulator suitable for modeling small semiconductor devices has been developed in which Monte Carlo and drift-diffusion models are combined. In critical device regions, the position-dependent coefficients of an extended drift-diffusion equation are extracted from a Monte Carlo simulation. Criteria for identifying these regions are described. Additional features which make the code more efficient are presented. First, a free-flight time calculation method using a new self-scattering algorithm is described. It allows for an efficient reduction of self-scattering events. Second, a unique Monte Carlo-Poisson coupling scheme has been developed which converges faster than all presently known schemes. It exploits the so-called Monte Carlo-drift diffusion coupling technique, which also forms the basis of the hybrid method. The simulator has been used to model submicron MOSFET's with gate lengths down to 0.15 /spl mu/m. In addition to the non-local effects occurring in these devices, the performance of the hybrid simulation method is analyzed. >

A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis

The high-voltage and self-heating behavior of partial-SOI (silicon-on-insulator) LDMOSFETs were studied numerically. Different locations of the silicon window were considered to investigate the electrical and thermal effects. It is found that the potential distribution of the partial-SOI LDMOSFET with the silicon window under the drain is similar to that of standard junction isolation devices. With the silicon window under the source the potential distribution is similar to that of the conventional SOI LDMOSFET. Using the two-dimensional numerical simulator MINIMOS-NT, we confirm that the breakdown voltage of partial-SOI LDMOSFETs with a silicon window under the source is higher than that of partial-SOI LDMOSFET with a silicon window under the drain.

/pdf/a-numerical-study-of-partial-soi-ldmosfets-15vsrrn20b.pdf

A numerical study of partial-SOI LDMOSFETs

https://www.iue.tuwien.ac.at/pdf/ib_2007/hashed_links/ep4PPhrKOr9Y_us.pdf

Carrier concentration dependence of the mobility in organic semiconductors

To overcome limitations of the classic drift-diffusion model, several higher-order transport models such as Stratton’s energy-balance model and Blotekjaer’s hydrodynamic model have been proposed. While for the drift-diffusion model the only transport parameter to be modeled correctly is the carrier mobility, there are many more significant parameters in higher-order models which cannot be directly taken from measurements. These parameters have to be chosen consistently, because otherwise the accuracy of the transport model cannot be properly assessed. Although a considerable number of parameter suggestions exists, it is not clear how well these models work when applied to submicron devices. Here we attempt a practical comparison as consistent as possible.

/pdf/advanced-transport-models-for-sub-micrometer-devices-2bwebsk422.pdf

Advanced Transport Models for Sub-Micrometer Devices

Temperature and field-dependence of hopping conduction in organic semiconductors

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