Hans J. Queisser
Max Planck Society
79 Papers
913 Citations
Hans J. Queisser is an academic researcher from Max Planck Society. The author has contributed to research in topics: Silicon & Semiconductor. The author has an hindex of 24, co-authored 79 publications.
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Papers
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
TL;DR: In this article, an upper theoretical limit for the efficiency of p−n junction solar energy converters, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of holeelectron pairs is radiative as required by the principle of detailed balance.
12.8K
Quantum efficiencies exceeding unity due to impact ionization in silicon solar cells
TL;DR: In this paper, internal quantum efficiencies in silicon solar cells were demonstrated to exceed unity for photon energies above the first direct band gap and to show distinct spectral features that correspond to specific points in the Brillouin zone.
321
Decay kinetics of persistent photoconductivity in semiconductors
Hans J. Queisser,D.E. Theodorou +1 more
TL;DR: Results of the temporal decay of excess conductivity after illumination for low temperatures and spatial carrier separation agree with theory, which predicts a decay essentially logarithmic in time.
227
Novel optimization principles and efficiency limits for semiconductor solar cells
TL;DR: The theoretical upper limit for solar cell conversion efficiency can be raised if photon absorption and electron-hole excitation follow a specific pathway that includes photon absorption at specific points in the Brillouin zone, and an inverse Auger effect mechanism for the multiplication of electron- hole pairs.
225
Nonexponential relaxation of conductance near semiconductor interfaces.
TL;DR: Proposition d'un modele pour expliquer la relaxation non exponentielle de la charge d'exces photoinduite a une barriere d'interface GaAsn/GaAs avec une separation spatiale croissante des porteurs.
122