The purpose of this article is to review the current status of a frontier in dynamic spintronics and contemporary magnetism, in which much progress has been made in the past decade, based on the creation of a variety of micro- and nano-structured devices that enable electrical detection of magnetization dynamics. The primary focus is on the physics of spin rectification effects, which are well suited for studying magnetization dynamics and spin transport in a variety of magnetic materials and spintronic devices. Intended to be intelligible to a broad audience, the paper begins with a pedagogical introduction, comparing the methods of electrical detection of charge and spin dynamics in semiconductors and magnetic materials respectively. After that it provides a comprehensive account of the theoretical study of both the angular dependence and line shape of electrically detected ferromagnetic resonance (FMR), which is summarized in a handbook formate easy to be used for analyzing experimental data. We then review and examine the similarity and differences of various spin rectification effects found in ferromagnetic films, magnetic bilayers and magnetic tunnel junctions, including a discussion of how to properly distinguish spin rectification from the spin pumping/inverse spin Hall effect generated voltage. After this we review the broad applications of rectification effects for studying spin waves, nonlinear dynamics, domain wall dynamics, spin current, and microwave imaging. We also discuss spin rectification in ferromagnetic semiconductors. The paper concludes with both historical and future perspectives, by summarizing and comparing three generations of FMR spectroscopy which have been developed for studying magnetization dynamics.

Electrical Detection of Magnetization Dynamics via Spin Rectification Effects

Electrical detection of magnetization dynamics via spin rectification effects

The anomalous Hall effect in ferromagnetic materials has attracted much attention for more than a century due to its physical complexity and important applications. Depending on its origin, this effect has been explained by three typical mechanisms: intrinsic contribution [1], skew scattering [2], and side jump [3], which cause exponential dependences with different power indexes between the extraordinary Hall conductivity σ xy and the longitudinal conductivity σ xx in experiments [4]. The power law has been extensively studied experimentally in a large series of ferromagnetic materials, by changing the temperature, disorder scattering, and the density of states at the Fermi surface [1].

/pdf/scaling-of-the-anomalous-hall-effect-in-ferrimagnetic-co-90-38gb4is98a.pdf

Scaling of the Anomalous Hall Effect in Ferrimagnetic Co 90 Gd 10 Thin Films

Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current-driven spintronic devices. The absence of Joule heating and reduced spin wave damping in insulating ferromagnets have been suggested for implementing efficient logic devices. After the successful demonstration of a majority gate based on the superposition of spin waves, further components are required to perform complex logic operations. Here, we report on magnetization orientation-dependent spin current detection signals in collinear magnetic multilayers inspired by the functionality of a conventional spin valve. In Y3Fe5O12|CoO|Co, we find that the detection amplitude of spin currents emitted by ferromagnetic resonance spin pumping depends on the relative alignment of the Y3Fe5O12 and Co magnetization. This yields a spin valve-like behavior with an amplitude change of 120% in our systems. We demonstrate the reliability of the effect and identify its origin by both temperature-dependent and power-dependent measurements.

/pdf/magnon-detection-using-a-ferroic-collinear-multilayer-spin-3yq7u712s1.pdf

Magnon detection using a ferroic collinear multilayer spin valve

In this letter, spin rectification was used to study the electric field controlled dynamic magnetic properties of the multiferroic composite which is a Co stripe with induced in-plane anisotropy deposited onto a Pb(Mg1∕3Nb2∕3)O3-PbTiO3 substrate. Due to the coupling between piezoelectric and magnetoelastic effects, a reversible in-plane anisotropy switching has been realized by varying the history of the applied electric field. This merit results from the electric hysteresis of the polarization in the nonlinear piezoelectric regime, which has been proved by a butterfly type electric field dependence of the in-plane anisotropy field. Moreover, the electric field dependent effective demagnetization field and linewidth have been observed at the same time.

Electric field controlled reversible magnetic anisotropy switching studied by spin rectification

In this letter, we propose a dc electrical detection method for investigating the spin dynamics of ferromagnetic thin films. Based on anomalous Hall effect (AHE), the out-of-plane component of the dynamic magnetization can directly rectify the rf current into a time-independent Hall voltage at the ferromagnetic resonance. This method is applied for studying the damping mechanism in Co90Zr10 films. The thickness dependent zero-frequency linewidth and the effective Gilbert damping are related to the surface roughness and microstructure evolution. Compared with standard cavity ferromagnetic resonance, the AHE rectification is more suitable for studying the dynamic properties of local magnetic moment.

Electric detection of the thickness dependent damping in Co90Zr10 thin films

We report the observation of a transverse dc voltage which appears when a radio frequency (rf) current flows along the longitudinal direction of a ferromagnetic Hall device. This effect is fully explained through the spin rectification enabled by the anomalous Hall effect, which is nonlinear coupling between the dynamic magnetization and the rf current. The observed resonant feature and angular dependent line shape are related to the magnetization precession driven by a rf magnetic field. This suggests a method for detection of spin dynamic and rf magnetic field vector.

Spin rectification enabled by anomalous Hall effect

We testified the scaling theory of room temperature anomalous Hall effect in amorphous Co90Zr10 ferromagnetic thin films with the thickness between 5 nm to 600 nm. The experiment results did not meet the theory expectation if we simply put σxy and σxx into a log-log plot, because a negative exponent in σxy = σxxβ appeared for the films thicker than 100 nm. We removed the thickness independent bulk contribution to the scattering, and rebuilt the scaling relation by using only the surface/interface contribution. A crossover from the intrinsic moderately dirty regime, where β = 0.82 to the dirty regime, where β = 1.76, had been observed, which matched previous results and theory expectations. Therefore, it is necessary to remove the bulk contribution in establishing the AHE scaling relation when using the thickness to tune the transportation properties of ferromagnetic thin films.

Scaling of the thickness dependent anomalous Hall effect in amorphous ferromagnetic thin films

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Electric detection of the thickness dependent damping in Co90Zr10 thin films

Spin rectification enabled by anomalous Hall effect

Scaling of the thickness dependent anomalous Hall effect in amorphous ferromagnetic thin films