IEEE Antennas and Wireless Propagation Letters

This paper presents a dual band dipole antenna. The antenna is proposed for 2.45 & 5 GHz WiFi system. The 4NEC2 simulator is used to analyze the proposed antenna. Basically, the dipole is designed at lower frequency band (2.4 – 2.5 GHz). Also, the upper frequency band (5.15 – 5.85 GHz) can be achieved by adding the parasitic wires coupled to the dipole. The simulated results of S 11 show that the dual band resonant frequency can be obtained. The radiation patterns are also simulated. Gains of the antenna are higher than 2 and 5 dBi at lower and upper frequency bands, respectively. Then, the antenna is fabricated and tested to confirm the simulation. The measured results are consistent with the simulated ones.

A Dual Band Dipole Antenna for WiFi Applications

This paper presents a CPW fed wideband planar antenna for Wireless application. The antenna proposed here is designed using FR4 epoxy substrate with dielectric constant 4.4 and has an overall dimension of 25mmx35.5mmx1.6mm. The antenna exhibit resonance at 5.8 GHz with impedance band width 3.45GHz from 3.8GHz 7.25GHz(return loss>-10dB) which is used for IEEE 802.11a/b/g/n/HYPERLAN2 and RFID applications. The fundamental antenna parameters such as return loss, gain, VSWR are obtained and all met standard values. The designed structure is simulated using Electromagnetic Simulator ANSYSHFSS.

CPW Fed Monopole Antenna with Trapezoidal ground plane for Wide Band Application

FR4 is presently the most commonly used substrate for designing microwave devices. This paper presents how the proposed modified PTFE (PolyTetraFluoroEthylene) is better than FR4 through a comparative study between the two substrates by observing the performance characteristics of the antenna. Improvement in bandwidth and gain without disturbing the radiation pattern is observed with the use of PTFE with hexagonal-Boron Nitride (h-BN) as a filler over the use of FR4 substrate. The antenna performance could be enhanced with the adoption of PTFE+h-BN as substrate.

Effect of Novel PTFE+h-BN Substrate on Performance Characteristics of an Antenna

The Multiband dipole antenna for 4×4 MIMO for LTE Application of indoor small cell base station is proposed. The proposed antenna can provide two wide operating bands of 1710–2690 and 3400–3600MHz that the resonant modes generated by the coupling stub and silt. This planar 4-port Multiband MIMO antennas are placed symmetrically on the four edges of the substrate which achieve the pattern and polarization diversity characteristics. The envelope correlation coefficient (ECC) is less than 0.1 in the all status for 4×4 MIMO applications.

Design of Multiband dipole antenna for 4×4MIMO in LTE Application

A novel Dual band monopole WLAN antenna is proposed in this paper The design idea of the antenna is derived from the dipole antenna The size of proposed antenna is much smaller than that of conventional dipole antenna Two antenna shaped L structure by rotating the radiation part of dipole antenna, so in the case of the dual band, the size of antenna can be reduced to no more than 07 wavelengths The lumped port on the microstrip feed line structure is applied to feed the antenna The reflection coefficient, radiation pattern and gain of the antenna is simulated and calculated The simulation results are as follows: The high frequency and low frequency resonance frequencies of the frequency monopole antenna fall on the IEEE 80211a (515∼5825GHz) and IEEE 80211b (24∼24825GHz) operating frequency bands, respectively, which is suitable for our requirements

A dual-band monopole antenna for WLAN application

In this paper, a dual-band Doherty power amplifier (DPA) with high efficiency and linearity is designed by using a simplified design method. Dual-band gain balance and output impedance pre-adjustment transmission line (TL) are used to improve the circuit performance and simplify output match network (OMN) respectively. The carrier and peaking amplifiers using GaN HEMT Cree CG2H40010F devices are designed under the bias condition of $V_{\mathrm{d}(\mathrm{C},\mathrm{P})}=28\ \mathrm{V}$ and $V_{\mathrm{g}(\mathrm{C})}=2.7\ \mathrm{V},\ V_{\mathrm{g}(\mathrm{P})}=- 5.4\ \mathrm{V}$, the dual-band DPA exhibits 43.1/43 dBm saturated output power, 12/11.5 dB small signal gain, 61.6/ 60% peak power added efficiency (PAE) and 46.9/43.5 % PAE of 6-dB-power back-off, at two operating frequencies.

Design of Dual-band High Efficiency and Linearity Doherty Power Amplifier

A dual-band high efficiency power amplifier (PA) at Ka-band (28/39 GHz) by using 0.15 um GaN on SiC process is proposed. The PA utilizes two-stage two-way combined structure with dual-band matching networks which are composed of a series transmission line and impedance buffer element, to fulfil matching conditions at both fundamental and harmonic termination. The proposed dual-band PA achieves the small signal gain of 26/15 dB, 35 dBm saturation output power, 38%/29 % peak power added efficiency (PAE) at 28 and 39 GHz, respectively. The proposed GaN MMIC PA achieves in a small size (1.6 mm* 1.2 mm) while still remaining the comparable performance in other parameters.

Design of Dual-Band 28/39GHz Power Amplifier MMIC in 0.15-μm GaN HEMT Technology

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Papers

A dual-band monopole antenna for WLAN application

Design of Dual-band High Efficiency and Linearity Doherty Power Amplifier

Design of Dual-Band 28/39GHz Power Amplifier MMIC in 0.15-μm GaN HEMT Technology