An apparatus for examining a specimen with a beam of charged particles, where charging of the specimen is avoided or reduced by injecting inert gas onto the sample's surface. In order to avoid interactions with the electron optics, various embodiments are disclosed for providing a rotationally symmetrical nozzles and/or electrodes. Additionally, embodiments are disclosed wherein a plurality of gas conduits are arranged in a rotationally symmetrical manner. Alternatively, the conduit is incorporated into an element of the electron optics, such as the magnetic lens. Also, in order to reduce or eliminate interaction of the electrons with the gas molecules, embodiments are disclosed wherein the gas is pulsated, rather than continually injected.

Apparatus and method for examining specimen with a charged particle beam

A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate “S” to be inspected into an inspection chamber 23-1; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.

Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former

A focused ion beam apparatus includes a plasma generator having a plasma torch therein, which lets plasma flow out while being kept inside, a differential exhaust chamber that is connected to the plasma torch via the torch orifice to cause adiabatic expansion of the plasma flowing out of the plasma torch to form a supersonic flow of the plasma, a drawing orifice provided at the differential exhaust chamber at a position facing the torch orifice to draw ions from the supersonic flow of the plasma, a drawing electrode that electrostatically accelerates ions having passed through the drawing orifice to further draw ions, and an ion optical system that focuses the ions drawn from the drawing electrode and causing the ions to enter the sample by optically manipulating the ions.

Focused ion beam apparatus

A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.

Localized Plasma Processing

A system and method for testing substrates is generally provided. In one embodiment, a test system for testing a substrate includes a load lock chamber, a transfer chamber and a test station. The load lock chamber and the test station are disposed on top of one another and coupled to the transfer chamber. The transfer chamber includes a robot adapted to transfer a substrate between the load lock chamber, which is at a first elevation, and the test station, which is at a second elevation. In another embodiment, a test station is provided having a turntable adapted to rotate the substrate. The turntable enables the range of motion required to test the substrate to be substantially reduced while facilitating full test and/or inspection of the substrate.

Large substrate test system

A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber (18) provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering. The workpiece is returned to the load-lock chamber after a pattern has been formed thereon in the processing chamber by reactive processing including irradiating the surface of the workpiece with a charged particle beam in an environment of the reactive gas, and the workpiece is subjected to a plasma process to remove the reactive gas adsorbed by the workpiece during pattern formation and adhering to the workpiece.

Pattern forming method using charged particle beam process and charged particle beam processing system

PROBLEM TO BE SOLVED: To stabilize the judgment of end point in etching step following the inspection of section and prevent a foreign matter inside an etching chamber from increasing so as to realize highly efficient and high-yield production by filling a hole whose section is worked, after section inspection of sample inline. SOLUTION: In a semiconductor production system, a line of production devices 1 to 4 is comprised of an ion implantation device, an etching device, a resist material coating device, a CMP device, etc. The devices 1 to 4 include process monitors to acquire an information on process error, etc. In optional step of this process, an inspection step for inspecting a foreign matter on a wafer by a foreign matter inspection device 6 or a step for inspecting the appearance on the wafer by a pattern inspection device 7 is provided. Next, sectional inspection is performed by a sectional inspection device 9. As a result of the sectional inspection, when the wafer is judged to be normal, the sectional hole of the wafer is filled by a device 10 for filling sectional hole, and then the wafer is returned to an n+1th step again and the production process is continued.

Production of semiconductor and inspection method therefor, and device therefor

PROBLEM TO BE SOLVED: To improve the working efficiency and reliability by automating he observation of the sectional structure of a fine electronic device, using a charged particle beam. SOLUTION: This method automatically determines the section processing condition with a charged particle beam on the basis of test results (of electric characteristics, foreign matter size and position thereof) and database (design, processing shape and processing characteristic databases), using a defect analyzing tool 3, processing shape determining means 4, 3dimensional shape CAD 6 and scan condition determining means 9. After processing, for the sectional observation, the charged particle beam is automatically positioned, focused and adjusted for the astigmatic correction, etc., and obtained tomographic data is automatically optimized and displayed on a display means (monitor) for the sectional observation.

Charged particle beam type tomographic analyzer system, method thereof and charged particle beam processor

PROBLEM TO BE SOLVED: To provide a focused charged particle beam device that can control charged particle beam current without using an aperture, can continuously control the beam current and does not produce foreign matters or impurities in minute machining and analysis using the focused charged particle beam, and fabricate high-quality semiconductor devices with a high yield by performing the failure analysis of a semiconductor manufacturing line by using this device and analysis apparatuses. SOLUTION: This charged particle beam source changes a gas in a plasma chamber 8 installed in a movable central conductor (semi-coaxial part) 3 into a plasma 7 by adjusting the movable central conductor (semi-coaxial part) 3 installed in a semi-coaxial resonator 1. In addition, it controls an ion beam current down to the range of some pA to some nA by adjusting the high-frequency power from a high-frequency antenna 4 installed in the movable central conductor 3.

Charged particle source, charged particle beam device, failure analysis method and manufacture of semiconductor device

PROBLEM TO BE SOLVED: To realize patterning by charged beam processing improved to protect a sample against corrosion due to reaction gas adsorbed to the surface thereof even when the sample is taken out into the atmosphere after patterning and a charged beam processing system and a charge beam processing system. SOLUTION: The charge beam processing system comprises an ion beam chamber 6 with an ion beam optical system, a main chamber 18 with a gas nozzle 13 for blowing a reaction gas toward a sample 18, and a load lock chamber 28 provided for the main chamber 18 through a gate valve 20. The load lock chamber 28 has a function for performing sputter etching through plasma processing by introducing an inert gas. Reactive processing is performed in the main chamber 18 through irradiation with reactive gas and a charged beam to form a pattern and a sample is transferred into the load lock chamber 28 where the sample is subjected to plasma patterning while desorbing reactive gas therefrom.

Patterning method by charged beam processing and charged beam processing system

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