Hal Edwards
Texas Instruments
121 Papers
873 Citations
Hal Edwards is an academic researcher from Texas Instruments. The author has contributed to research in topics: Transistor & CMOS. The author has an hindex of 20, co-authored 114 publications. Previous affiliations of Hal Edwards include University of Texas at Austin.
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Papers
Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices
Hal Edwards,Rudye McGlothlin,Richard San Martin,Elisa U,Michael Gribelyuk,Rachel Mahaffy,C. Ken Shih,R. Scott List,Vladimir A. Ukraintsev +8 more
TL;DR: In this paper, a variant of scanning capacitance microscopy (SCS) is presented, where the applied dc bias voltage between the tip and sample on successive scan lines, several points of the high-frequency capacitance-voltage characteristic C(V) of the metal-oxide-semiconductor capacitor formed by the tip, oxidized Si surface are sampled throughout an entire image.
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Silicon integrated circuit thermoelectric generators with a high specific power generation capacity
Gangyi Hu,Hal Edwards,Mark Lee +2 more
- 01 Jul 2019
TL;DR: In this article, the authors report TEGs created using nanostructured silicon thermopiles fabricated on an industrial silicon complementary metal-oxide-semiconductor (CMOS) process line.
112
Spatially varying energy gap in the CuO chains of YBa2Cu3O7-x detected by scanning tunneling spectroscopy.
TL;DR: Current-imaging tunneling spectroscopy was performed on cold-cleaved single crystals of YBa2Cu307, at 20 K, and 1(V) curves show an energy gap of about 20 meV which disappears near oxygen vacancies.
109
A Terraced Scanning Superconducting Quantum Interference Device Susceptometer with Sub-Micron Pickup Loops
Nicholas C. Koshnick,Martin E. Huber,Julie A. Bert,Clifford W. Hicks,Jeff Large,Hal Edwards,Kathryn A. Moler +6 more
TL;DR: In this paper, a family of scanning SQUID susceptometers with terraced tips that position the pick-up loops 300 nm from the sample is presented. But the sensitivity of these susceptometers is limited by the size of the pickup loops.
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pn-junction delineation in Si devices using scanning capacitance spectroscopy
Hal Edwards,Vladimir A. Ukraintsev,Richard San Martin,F. Scott Johnson,Philip Menz,Shawn Walsh,Stan Ashburn,K. Scott Wills,Ken Harvey,Mi-Chang Chang +9 more
TL;DR: The scanning capacitance microscope (SCM) is a carrier-sensitive imaging tool based upon the well-known scanning-probe microscope (SPM), which produces a two-dimensional map of the electrical pn junctions in a Si device and also provides an estimate of the depletion width.
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