We herein demonstrate self-doping of the CO32– anionic group into a wide bandgap semiconductor Bi2O2CO3 realized by a one-pot hydrothermal technique. The photoresponsive range of the self-doped Bi2O2CO3 can be extended from UV to visible light and the band gap can be continuously tuned. Density functional theory (DFT) calculation results demonstrate that the foreign CO32– ions are doped in the caves constructed by the four adjacent CO32– ions and the CO32– self-doping can effectively narrow the band gap of Bi2O2CO3 by lowering the conduction band position and meanwhile generating impurity level. The photocatalytic performance is evaluated by monitoring NO removal from the gas phase, photodegradation of a colorless contaminant (bisphenol A, BPA) in an aqueous solution, and photocurrent generation. In comparison with the pristine Bi2O2CO3 which is not sensitive to visible light, the self-doped Bi2O2CO3 exhibits drastically enhanced visible-light photoreactivity, which is also superior to that of many other ...

Anionic Group Self-Doping as a Promising Strategy: Band-Gap Engineering and Multi-Functional Applications of High-Performance CO32–-Doped Bi2O2CO3

Visible-light-driven photocatalytic degradation of diclofenac by carbon quantum dots modified porous g-C3N4: Mechanisms, degradation pathway and DFT calculation.

Bismuth oxyhalide layered materials for energy and environmental applications

Quaternary magnetic BiOCl/g-C3N4/Cu2O/Fe3O4 nano-junction for visible light and solar powered degradation of sulfamethoxazole from aqueous environment

A facile approach is developed to synthesis the highly efficient photocatalyst of Bi2O2CO3/BiOCl. The composite of Bi2O2CO3/BiOCl exhibits excellent photocatalytic activity toward Rhodamine B (RhB) under visible light, which is even better than that of P25 (commercial TiO2) under UV light. The role of the active species in the process of the degradation is evaluated by using different types of active species scavengers and measurement of electron spin resonance (ESR). The relative band structures of the Bi2O2CO3 and BiOCl are determined combined with the flat potential (Vfb) and bandgap energy (Eg) evaluated by UV–vis diffuse reflectance spectra. The results show that the composite of the two semiconductors facilitates the photosensitized degradation of RhB under visible light (420 nm

Highly efficient Bi2O2CO3/BiOCl photocatalyst based on heterojunction with enhanced dye-sensitization under visible light

Yingying Zhang, Shiqiang Xia Lu Qin, Xuejing Feng, Wenrong Qi, Yajing Jiang, Hai Lu, Yufang Liu, Daohong Song, Liqin Tang, Zhigang Chen School of Physics, Henan Normal University, Xinxiang, Henan 453007, China The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute and School of Physics, Nankai University, Tianjin 300457, China Department of Physics and Astronomy, San Francisco State University, San Francisco, California 94132, USA xiashiqiang@htu.edu.cn liuyufang2005@126.com tanya@nankai.edu.cn ∗These authors contributed equally (Dated: June 3, 2022)

Symmetry-protected higher-order exceptional points in staggered flatband rhombic lattices

We report the wavelength dependencies of the two-photon absorption coefficients β as well as the nonlinear refractive index n2 of undoped β-Ga2O3 single crystal in the spectral range 350–515 nm (0.51 < Ephoto/Eg < 0.75). Femtosecond Z-scan measurements show that n2 decreases monotonically toward the shortwave side, while the maximum value of n2 is 5.0 × 10−19 m2/W near half of the bandgap, Eg. Interestingly, a second upward trend in β was observed when the incident photon energy is larger than 0.6Eg, indicating the impact of additional inter-band transitions with higher energy. A higher-energy band-to-band transition around 6.0 eV was determined by both femtosecond nondegenerate two-photon absorption spectroscopy and ab initio calculations. Our results could provide guidance for designing nonlinear β-Ga2O3 photonic devices in the UV-visible spectral range.

Dispersion of two-photon absorption and nonlinear refraction in 
 β
 -Ga2O3 from 350 to 515 nm

High-temperature ideal Weyl semimetal phase and Chern insulator phase in ferromagnetic 
BaEuNiOsO6
 and its (111) 
(BaEuNiOsO6)/(BaTiO3)10
 superlattice

Enhanced photosensitization process induced by the p–n junction of Bi2O2CO3/BiOCl heterojunctions on the degradation of rhodamine B

The Fe3GeTe2 monolayer, a ferromagnetic topological candidate with a high Curie temperature of 130 K, has recently garnered considerable interest. We investigated the impact of strain on the electronic, magnetic, and topological properties of the Fe3GeTe2 monolayer using density functional theory calculations. Our results showed that the Fe3GeTe2 monolayer was an itinerant ferromagnet with a high spin polarization of 69.93% and out-of-plane easy magnetization. Tensile strain had no profound impact on the anomalous Hall conductivity (AHC). However, when applying a compressive biaxial strain of −3%, the AHC at the Fermi level was dramatically enhanced to 1.62 e2/h, which is much larger than that of the bulk (0.7 e2/h) and bilayer (1.5 e2/h) material. The large AHC nearly coincided with the singularity of the energy bands near the M point. Our results highlight the potential of using strain engineering to control and optimize the properties of two-dimensional topological materials.

Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering

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Symmetry-protected higher-order exceptional points in staggered flatband rhombic lattices

Dispersion of two-photon absorption and nonlinear refraction in β -Ga2O3 from 350 to 515 nm

High-temperature ideal Weyl semimetal phase and Chern insulator phase in ferromagnetic BaEuNiOsO6 and its (111) (BaEuNiOsO6)/(BaTiO3)10 superlattice

Enhanced photosensitization process induced by the p–n junction of Bi2O2CO3/BiOCl heterojunctions on the degradation of rhodamine B

Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering