Hydrogen chemisorption on III-V semiconductor surfaces

http://www-old.mpi-halle.mpg.de/mpi/publi/pdf/2224_96.pdf

Segregation of In atoms at clean and hydrogen passivated InP(100) surfaces

The structure of InP surfaces prepared by ion bombardment and annealing (IBA) and by decapping of InP (001) samples grown by metal organic vapor phase epitaxy is studied. The structural changes of the surfaces during preparation are monitored by low-energy electron diffraction and related to the surface electronic modifications as revealed by reflectance-anisotropy spectroscopy (RAS). For both preparation methods we find (2\ifmmode\times\else\texttimes\fi{}4) reconstructions and almost identical RAS spectra. This finding contrasts with previous reports usually claiming a (4\ifmmode\times\else\texttimes\fi{}2) surface after IBA Auger-electron spectroscopy as well as hydrogen-adsorbate vibrations recorded with high-resolution electron-energy spectroscopy indicate an In-rich surface stoichiometry.

Structure of InP (001) surfaces prepared by decapping and by ion bombardment and annealing

Surface etching of InP(100) by chlorine

Hydrogen induced structure changes of GaAs(100) c(4×4), (2×4) and (4×2) surfaces

Phonon, plasmon, and vibrational modes of clean and hydrogenated molecular‐beam epitaxially grown As‐rich GaAs(100)‐c(4×4) and ion‐bombarded and annealed InP(100) 4×2 have been studied with high‐resolution electron energy‐loss spectroscopy The plasmon energy at the interface of depletion layer and bulk enabled us to determine the carrier concentration for Si‐doped GaAs samples With increasing hydrogen exposure characteristic changes in plasmon energy, its intensity and the intensity of the surface optical phonons have been observed This is explained by changes in the space charge regime Using hydrogen as a local probe provides sensitivity to the stoichiometry and to the chemical bonding situation at the uppermost surface layer It is shown that the As‐terminated GaAs(100) surface can be converted finally into a Ga‐terminated surface by etching with atomic hydrogen For InP, for the very first time an interface plasmon was observed at 90 meV, due to high S doping In contrast to GaAs, sequential hydrogenation results in the formation of metallic droplets (In), which increase in size and concentration with increasing hydrogen exposure Consequently, the phonon and plasmon intensities are reduced drastically Models of the atomic surface structures for different stages of hydrogenation are discussed

Etching of InP(100) 4×2 and molecular‐beam epitaxially grown GaAs(100)‐c(4×4) with atomic hydrogen

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Etching of InP(100) 4×2 and molecular‐beam epitaxially grown GaAs(100)‐c(4×4) with atomic hydrogen