Thin film piezoelectric materials offer a number of advantages in microelectromechanical systems (MEMS), due to the large motions that can be generated, often with low hysteresis, the high available energy densities, as well as high sensitivity sensors with wide dynamic ranges, and low power requirements This paper reviews the literature in this field, with an emphasis on the factors that impact the magnitude of the available piezoelectric response For non-ferroelectric piezoelectrics such as ZnO and AlN, the importance of film orientation is discussed The high available electrical resistivity in AlN, its compatibility with CMOS processing, and its high frequency constant make it especially attractive in resonator applications The higher piezoelectric response available in ferroelectric films enables lower voltage operation of actuators, as well as high sensitivity sensors Among ferroelectric films, the majority of the MEMS sensors and actuators developed have utilized lead zirconate titanate (PZT) films as the transducer Randomly oriented PZT films show piezoelectric e(31, f) coefficients of about - 7 C/m(2) at the morphotropic phase boundary In PZT films, orientation, composition, grain size, defect chemistry, and mechanical boundary conditions all impact the observed piezoelectric coefficients The highest achievable piezoelectric responses can be observed in {001} oriented rhombohedrally-distorted perovskites For a variety of such films, e(31,f) coefficients of - 12 to - 27 C/m(2) have been reported

Thin Film Piezoelectrics for MEMS

Piezoelectric films for high frequency ultrasonic transducers in biomedical applications

Smart materials, which exhibit piezoelectricity, find an eclectic range of applications in the industry. The direct piezoelectric effect has been widely used in sensor design, and the inverse piezoelectric effect has been applied in actuator design. Ever since 1954, PZT and BaTiO3 were widely used for sensor and actuator applications despite their toxicity, brittleness, inflexibility, etc. With the discovery of PVDF in 1969, followed by development of copolymers, a flexible, easy to process, nontoxic, high density alternate with high piezoelectric voltage coefficient was available. In the past 20 years, heterostructural materials like polymer ceramic composites, have received lot of attention, since these materials combine the excellent pyroelectric and piezoelectric properties of ceramics with the flexibility, processing facility, and strength of the polymers resulting in relatively high dielectric permittivity and breakdown strength, which are not attainable in a single phase piezoelectric material. The current review article is an attempt to provide a compendium of all the work carried out with reference to PVDF-PZT composites. The review article evaluates the effect of grain size, content and other factors under the purview of dielectric and piezoelectric properties while evaluating the sensitivity of the material for sensor application. POLYM. ENG. SCI., 55:1589–1616, 2015. © 2015 Society of Plastics Engineers

Dielectric and piezoelectric properties of PVDF/PZT composites: A review

Piezoelectric microelectromechanical systems (MEMS) offer the opportunity for high-sensitivity sensors and large displacement, low-voltage actuators. In particular, recent advances in the deposition of perovskite thin films point to a generation of MEMS devices capable of large displacements at complementary metal oxide semiconductor-compatible voltage levels. Moreover, if the devices are mounted in mechanically noisy environments, they also can be used for energy harvesting. Key to all of these applications is the ability to obtain high piezoelectric coefficients and retain these coefficients throughout the microfabrication process. This article will review the impact of composition, orientation, and microstructure on the piezoelectric properties of perovskite thin films such as PbZr1−xTixO3 (PZT). Superior piezoelectric coefficients (e31, f of −18 C/m2) are achieved in {001}-oriented PbZr0.52Ti0.48O3 films with improved compositional homogeneity on Si substrates. The advent of such high piezoelectric responses in films opens up a wide variety of possible applications. A few examples of these, including low-voltage radio frequency MEMS switches and resonators, actuators for millimeter-scale robotics, droplet ejectors, energy scavengers for unattended sensors, and medical imaging transducers, will be discussed.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/AC28E0B7FC52ADDE14E1F58F59416494/S0883769400003614a.pdf/div-class-title-piezoelectric-thin-films-for-sensors-actuators-and-energy-harvesting-div.pdf

Piezoelectric Thin Films for Sensors, Actuators, and Energy Harvesting

Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication

A 100-MHz ultrasonic linear transducer array made from a piezoelectric zinc oxide thin film on a sapphire substrate was developed and evaluated. Epitaxial, high-acoustic quality 10-/spl mu/m-thick ZnO film layers were produced by rf-magnetron sputter deposition onto a (111)-oriented gold film (with a chromium adhesion layer) that was vacuum-evaporated onto a (0001) sapphire surface. We found that, in well-oriented growth of gold, it is important to control the chromium sublayer thickness (less than 5 nm). An array was constructed by photolithography with an appropriate etch. V-shaped grooves between adjacent elements were formed by using an anisotropic etchant (HCl and HNO/sub 3/-based) that preferentially etched the c-plane of ZnO. Typical array elements were 90 /spl mu/m wide, 3.2 mm long, and 10 /spl mu/m thick, and the pitch of an array was typically 100 /spl mu/m. Our fine uniform array resulted in uniform ultrasonic response of individual elements throughout the array. For a 32-element array, the ultrasound beam in the azimuth plane in water could be electronically focused in the 100 MHz range to obtain a half-amplitude width of 60 /spl mu/m at the focal depth, agreeing well with theoretical predictions. Besides the use demonstrated with this present transducer, piezoelectric thin films should also lead to fabrication of various other kinds of ultrasonic transducers that can operate at high frequencies and should provide opportunities for miniaturizing transducers and making integrated ultrasonic devices. >

A 100-MHz ultrasonic transducer array using ZnO thin films

Epitaxial growth of PbTiO(3) films on (100)SrTiO(3 ) single crystal plates is investigated in detail for piezoelectric device applications. PbTiO(3) films were prepared by RF magnetron sputtering at relatively low temperature and subsequently annealed. The films had a perovskite structure under a wide annealing temperature range. Epitaxial growth of PbTiO(3) films on SrTiO (3) single crystal was achieved, although there was a limitation in the maximum film thickness ( 0.6 mum) was successfully obtained by high-temperature sputtering. Lateral overgrowth of PbTiO(3) film was attempted using a high-temperature sputtering technique. A TEM micrograph confirms that PbTiO(3) film was epitaxially grown on SrTiO(3) single crystal and overgrown laterally to cover a Pt electrode film. To characterize film quality, ferroelectric properties are investigated. The electromechanical coupling constant of the PbTiO(3) film was evaluated by analyzing impedance characteristics, and was found to be as large as 0.8.

Epitaxial growth of PbTiO/sub 3/ films on SrTiO/sub 3/ by RF magnetron sputtering

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A 100-MHz ultrasonic transducer array using ZnO thin films

Epitaxial growth of PbTiO/sub 3/ films on SrTiO/sub 3/ by RF magnetron sputtering