A high temperature silicon on insulator pressure sensor utilising a Ti/TiN/Pt/Au electrode is presented for improving the thermal stability of ohmic contacts, which can work stably at high temperatures of up to 500°C. To analyse the characteristics of the electrode at high temperatures, a special test structure is measured using the linear transmission line method and Auger electron spectroscopy. To solve the measurement problem, a novel calibration setup is designed to calibrate the absolute pressure sensor at extremely high temperatures. The measurement results have shown that the pressure sensor has a nonlinearity error of 0.17%FS and a sensitivity of 0.24 mV/kPa with a measurement range of 30–150 kPa at 500°C, indicating the good thermal stability of the ohmic contacts.

https://ietresearch.onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2015.0181

Silicon on insulator pressure sensor based on a thermostable electrode for high temperature applications

Suppression of platinum penetration failure in Ti/Pt/Au beam lead metal systems using a TiN diffusion barrier

This article discusses the results of transmission electron microscopy (TEM)-based characterization of strontium-doped lead zirconate titanate (PSZT) thin films. The thin films were deposited by radio frequency magnetron sputtering at 300°C on gold-coated silicon substrates, which used a 15 nm titanium adhesion layer between the 150 nm thick gold film and (100) silicon. The TEM analysis was carried out using a combination of high-resolution imaging, energy filtered imaging, energy dispersive X-ray (EDX) analysis, and hollow cone illumination. At the interface between the PSZT films and gold, an amorphous silicon-rich layer (about 4 nm thick) was observed, with the film composition remaining uniform otherwise. The films were found to be polycrystalline with a columnar structure perpendicular to the substrate. Interdiffusion between the bottom metal layers and silicon was observed and was confirmed using secondary ion mass spectrometry. This occurs due to the temperature of deposition (300°C) being close to the eutectic point of gold and silicon (363°C). The diffused regions in silicon were composed primarily of gold (analyzed by EDX) and were bounded by (111) silicon planes, highlighted by the triangular diffused regions observed in the two-dimensional TEM image.

/pdf/microstructural-and-compositional-analysis-of-strontium-l7mj7j5cbd.pdf

Microstructural and compositional analysis of strontium-doped lead zirconate titanate thin films on gold-coated silicon substrates.

High temperature pressure sensors have been widely applied in modern industry. However, the performance of the pressure sensor is largely dependent on the thermal stability of ohmic contact electrode. This paper presents a TiSi
 2
/Ti/TiN/Pt/Au multilayer electrode. Linear transmission line method (TLM) and voltmeter-ammeter method have been used to measure the electronic properties of the electrode at high temperature. The test results show that the multilayer electrode can be used in fabricating high temperature pressure sensor. Moreover, a high temperature piezoresistive pressure sensor is designed using this multilayer electrode. ANSYS software and finite element method (FEM) have been used to analyze the stress distribution, sensitivity and nonlinearity. To verify this design, the pressure sensor is fabricated based on silicon on insulator (SOI) wafer. The pressure sensor is measured across the range of 30-150kPa and the temperature range is 25-500°C. The test results show that the ohmic contact electrode and the pressure sensor are able to work at high temperature.

High temperature pressure sensor using a thermostable electrode

Lead zirconate titanate Pb(Zr1-yTiy)O3 is a material that is known for its high piezoelectric and ferroelectric properties. Thick and thin films of lead zirconate titanate (PZT) have been repeatedly used in a variety of piezoelectricity or piezoresistivity based sensors such as biosensing cantilevers (Park et al., 2005a) and pressure sensors (Maluf & Williams, 2004). PZT is one of many ceramic compounds with a general ABO3 representation. Zirconium (Zr) and titanium (Ti) are B-site dopants of the compound and the ratio of Zr/Ti can alter the film properties such as the dielectric tenability (Yu et al., 2004). Certain A-site dopants (in place of a fraction of the lead atoms present in A-site locations) have been found to increase certain properties and introduce other properties. Examples of these are (i) lanthanumdoped PZT (PLZT) is known for enhanced electro-optic behaviour (Tunaboylu et al., 1998); (ii) stannum-doped PZT and niobium-doped PZT (PNZT) are known to exhibit shape memory behaviour, a property not exhibited by PZT (Yu & Singh, 2000); and (iii) the compound of interest in this chapter strontium-doped PZT (PSZT) has been reported to have improved piezoelectric, ferroelectric, dielectric tunability, and pyroelectric (infra-red radiation sensors by thermal effects) behaviour (Bedoya et al., 2000; Zheng et al., 2002; Araujo & Eiras, 2003; Yu et al., 2004).

/pdf/piezoelectric-thin-film-deposition-novel-self-assembled-iwyo3n825q.pdf

Piezoelectric Thin Film Deposition: Novel Self-Assembled Island Structures and Low Temperature Processes on Silicon

The effect of a titanium layer as a diffusion barrier in Ti/Pt/Au beam lead metallization on polysilicon was investigated. A critical temperature, defined as the beginning of Au-Si eutectic reaction, was investigated for specimens with electron-beam (EB) evaporated and radio frequency (RF) sputtered titanium films 23-- 3000 A thick deposited onto polysilicon films 0.2-2 µm thick. Polysilicon surface roughness was characterized by grain step height as a function of grain size and polysilicon film thickness. The titanium film thickness required to retain the same metallization integrity during heat treatment became greater with increase in the polysilicon film thickness. At the polysilicon surface, the grain size and the grain step height became greater with increase in the polysilicon film thickness. The mechanism of increased heat resistance with increased titanium film thickness was examined relative to grain step coverage effect.

Effects of Titanium Layer as Diffusion Barrier in Ti/Pt/Au Beam Lead Metallization on Polysilicon

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Effects of Titanium Layer as Diffusion Barrier in Ti/Pt/Au Beam Lead Metallization on Polysilicon