important corrections are presented. These corrections are calculated with the radiative transfer or Schwarzschild-Milne equation, which describes intensity transport at the ‘‘mesoscopic’’ level and is derived from the ‘‘microscopic’’ wave equation. A precise treatment of the diffuse intensity is derived which automatically includes the effects of boundary layers. Effects such as the enhanced backscatter cone and imaging of objects in opaque media are also discussed within this framework. This approach is extended to mesoscopic correlations between multiple scattered intensities that arise when scattering is strong. These correlations arise from the underlying wave character. The derivation of correlation functions and intensity distribution functions is given and experimental data are discussed. Although the focus is on light scattering, the theory is also applicable to microwaves, sound waves, and noninteracting electrons. [S0034-6861(99)00601-7]

/pdf/multiple-scattering-of-classical-waves-microscopy-mesoscopy-3cjkvpzjmd.pdf

Multiple scattering of classical waves: microscopy, mesoscopy, and diffusion

Respiratory sounds : Advances beyond the stethoscope

The conductance of laterally confined double-barrier quantum-well resonant-tunneling heterostructures is investigated. The confinement is provided by a Schottky gate and can be varied in a continuous way, giving direct proof of the quantum size effect. Data for dots with nominal diameters in the submicron range are reported. Possible evidence for a modulation of the Coulomb blockade by quantum confinement is presented

Confinement and single-electron tunneling in Schottky-gated, laterally squeezed double-barrier quantum-well heterostructures.

One major challenge for the development of spintronic devices is the control of the spin polarization of an electron current. We propose and demonstrate the use of a BeTe/Zn1−xSe/BeTe double barrier resonant tunneling diode for the injection of a spin-polarized electron current into GaAs and the manipulation of the spin orientation of the injected carriers via an external voltage. A spin polarization of up to 80% can be observed with a semimagnetic layer of only 3.5 nm thickness. By changing the resonance condition via the external voltage, the degree of spin polarization can be varied, though a complete spin switching has not yet been accomplished.

Electron spin manipulation using semimagnetic resonant tunneling diodes

We describe the valley current of double-barrier diodes as a scattering-assisted tunneling current. Scattering processes are included by using Fermi's golden rule between the unperturbed states of the tunneling structure, in a true three-dimensional calculation, without adjustable parameters. Intrinsic processes (optical and acoustic phonons, alloy disorder) are treated as well as the contribution of interface roughness. We apply it to several situations (geometry, doping, temperature, materials) and demonstrate that the calculated valley current agrees well with observation both with regard to structure in the valley current and peak-to-valley ratios

Scattering-assisted tunneling in double-barrier diodes: Scattering rates and valley current.

Data obtained on a set of GaAs/AlGaAs double‐barrier quantum‐well resonant tunneling structures are compared with model calculations of the ideal case where scattering is negligible and tunneling is coherent throughout the entire structure. The comparison points to interface roughness in the well as the most likely cause for the observed large valley currents. The currents at low biases, before resonance sets in, are also studied. Their magnitude is found to be consistent also with the sequential tunneling picture.

Investigations on resonant tunneling in III‐V heterostructures: Comparison between experimental data and model calculations

Data obtained from a set of asymmetric GaAs/AlGaAs double‐barrier resonant tunneling structures is presented. Low‐temperature I(V) characteristics, temperature dependencies, and magnetotunneling have been investigated. The data confirm conclusions drawn in previous studies on symmetric structures, lending further support to the description of tunneling in terms of sequential processes and momentum randomization most likely induced by interface roughness scattering in the well.

Tunneling through asymmetric double-barrier quantum-well heterostructures

We present data obtained on a set of symmetric GaAs/AlGaAs double‐barrier quantum‐well structures in which the thickness of the AlGaAs barriers has been systematically varied from 31 to 7.5 nm. Low‐temperature I(V ) characteristics, temperature dependencies, and magnetotunneling have been investigated. Our data suggest a dominance of sequential tunneling processes in the range investigated and point to interface roughness in the well as the possible cause for the large valley currents. Our best devices exhibit a current peak‐to‐valley ratio of about 20.

Investigations on resonant tunneling in III‐V heterostructures

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Investigations on resonant tunneling in III‐V heterostructures: Comparison between experimental data and model calculations

Tunneling through asymmetric double-barrier quantum-well heterostructures

Investigations on resonant tunneling in III‐V heterostructures