H. M. Wang
University of South Carolina
11 Papers
118 Citations
H. M. Wang is an academic researcher from University of South Carolina. The author has contributed to research in topics: Atomic layer epitaxy & Sapphire. The author has an hindex of 8, co-authored 11 publications.
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Papers
Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes
Jianping Zhang,Vinod Adivarahan,H. M. Wang,Qhalid Fareed,Edmundas Kuokstis,A. Chitnis,Maxim S. Shatalov,J. W. Yang,Grigory Simin,Muhammad Asif Khan,Michael Shur,Remis Gaska +11 more
TL;DR: In this article, a pulsed atomic layer epitaxy (PALE) growth technique for quaternary AlInGaN films for ultraviolet optoelectronics applications was reported. But the PALE approach was not applied to the growth of AL-GaN multiple quantum wells (MQWs) over sapphire substrates.
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Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters
Jianping Zhang,Edmundas Kuokstis,Qhalid Fareed,H. M. Wang,J. W. Yang,Grigory Simin,M. Asif Khan,G. Tamulaitis,G. Kurilčik,Saulius Jursenas,Arturas Zukauskas,Remis Gaska,Michael Shur +12 more
TL;DR: In this article, a pulsed atomic layer epitaxy (PALE) technique for quaternary AlInGaN growth is described, which allows for the deposition of high-quality Al-GaN layers at much lower temperatures than those required for conventional low-pressure metalorganic chemical vapor deposition (MOCVD), leading to an efficient incorporation of indium and a dramatic improvement in emission properties of the material.
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Strong ultraviolet emission from non‐polar AlGaN/GaN quantum wells grown over r‐plane sapphire substrates
Weijing Sun,Edmundas Kuokstis,Mikhail Gaevski,Jianping Zhang,C. Q. Chen,H. M. Wang,Jinwei Yang,Grigory Simin,M. Asif Khan,Remis Gaska,Michael Shur +10 more
TL;DR: In this paper, a comparative study of photoluminescence (PL) in GaN epitaxial layers and AlGaN/GaN MQWs on these two types of substrates is reported.
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Impact of Small Miscuts of (0001) Sapphire on the Growth of AlxGa1-xN/AlN
TL;DR: In this paper, the effect of various small miscuts of (0001) sapphire substrate (<1°) and the way to further improve the material quality was reported. And the surface morphologies can be easily controlled by the different substrate miscut angles.
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